公开(公告)号：EP1603206A2

公开(公告)日：2005-12-07

申请号：EP05108306.1

申请日：2000-02-03

申请人： THE FURUKAWA ELECTRIC CO., LTD.

发明人： YOSHIDA, Junji ,  TSUKIJI, Naoki ,  IKETANI, Akira ,  KIMURA, Naoki ,  NIEKAWA, Jun ,  KIMURA, Toshio ,  AIKIYO, Takeshi

IPC分类号： H01S5/10 ,  H01S5/028 ,  H01S5/024

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02492 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/3403

摘要： In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 µm but equal to or smaller than 1800 µm, and a low-reflection film S 1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S 2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

摘要翻译： 在本发明的半导体激光装置中，在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构，空洞长度大于1000μm但为1800μm以下， 并且在一个面上形成反射率为3％以下的低反射膜S1，并且在另一个面上形成反射率为90％以上的高反射膜S 2。 半导体激光器模块具有这样的结构，其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。 在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。