摘要:
A semiconductor laser device with two active-layer stripe structures has an n-InP substrate (1), an n-InP clad layer (2), a lower GRIN-SCH layer (3b), an active layer (4b), an upper GRIN-SCH layer (5b), a p-InP clad layer (6), and a p-InGaAsP contact layer (7) laminated in this order, in a side cross section including one of the stripe structure. A high-reflection film (12) is disposed on a reflection-side end surface, and a low-reflection film (13) is disposed on an emission-side end surface. A p-side electrode (8b) is disposed on only a part of the upper surface of the p-InGaAsP contact layer (7) so that a current non-injection area (14) is formed on the rest of the area.
摘要:
In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 µm but equal to or smaller than 1800 µm, and a low-reflection film S 1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S 2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.