公开(公告)号：EP3066699B1

公开(公告)日：2019-09-11

申请号：EP14793281.8

申请日：2014-11-04

申请人： THE UNIVERSITY OF WARWICK ,  VTT Technical Research Centre of Finland

发明人： GUNNARSSON, David ,  PARKER, Evan ,  PREST, Martin ,  PRUNNILA, Mika ,  WHALL, Terence

IPC分类号： H01L39/22 ,  G01J5/20

公开(公告)号：EP3066699A1

公开(公告)日：2016-09-14

申请号：EP14793281.8

申请日：2014-11-04

申请人： THE UNIVERSITY OF WARWICK ,  VTT Technical Research Centre of Finland

发明人： GUNNARSSON, David ,  PARKER, Evan ,  PREST, Martin ,  PRUNNILA, Mika ,  WHALL, Terence

IPC分类号： H01L39/22 ,  G01J5/20

CPC分类号： G01J5/046 ,  G01J5/024 ,  G01J5/20 ,  G01J2005/106 ,  G01J2005/208 ,  H01L31/09 ,  H01L39/22 ,  H01L39/24

摘要： A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor.