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公开(公告)号：EP0434434A1
公开(公告)日：1991-06-26
申请号：EP90314037.4
申请日：1990-12-20
申请人： THORN EMI plc
IPC分类号： H01L21/306 , C23F1/08
CPC分类号： H01L21/6708 , C23F1/08
摘要： Apparatus for back etching a body of material, such as a silicon wafer 12, comprises a fountain head 6 supplied with etchant 2 through an inlet pipe 4. The etchant 2 is forced through apertures 10 in a perforated member 8 and into contact with a surface of the silicon wafer 12 to be etched. Various configurations of apertures 10 are envisaged for maintaining the wafer 12 centrally over the fountain head 3 and also for imparting rotary motion to the wafer 12 to provide uniformity of etch.
The aparatus enables the silicon wafer to be supported solely by the etchant during the etching process, such that the wafer is subjected to minimal trauma.摘要翻译： 用于背面蚀刻诸如硅晶片12的材料体的装置包括通过入口管4供应腐蚀剂2的喷泉头6.蚀刻剂2被迫穿过多孔构件8中的孔10并与表面 的待蚀刻硅晶片12。 设想孔10的各种构造，用于将晶片12保持在中心位于喷泉头3上方，并且还用于将旋转运动传递给晶片12以提供均匀的蚀刻。 该装置使得硅晶片在蚀刻过程中仅由蚀刻剂支撑，使得晶片受到最小的创伤。
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公开(公告)号：EP0400981A3
公开(公告)日：1991-05-29
申请号：EP90305864.2
申请日：1990-05-30
申请人： THORN EMI plc
IPC分类号： G01F1/28
CPC分类号： G01F1/28
摘要： A flow sensing device includes a semiconductor substrate 31 and a pivoted beam 1. Below one half of the beam is a channel 7 running throughout the substrate 31, and below the other half of the beam is a cavity 8. During operation, a differential force exists across the beam, and the amount of force required to compensate for this differential force is indicative of the rate of fluid flow.
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公开(公告)号：EP0400981B1
公开(公告)日：1993-09-15
申请号：EP90305864.2
申请日：1990-05-30
申请人： THORN EMI plc
IPC分类号： G01F1/28
CPC分类号： G01F1/28
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公开(公告)号：EP0454398A3
公开(公告)日：1992-03-25
申请号：EP91303599.4
申请日：1991-04-22
申请人： THORN EMI plc
IPC分类号： H01L37/02
摘要： A thermal imaging device comprising a pyroelectric layer (8) having on one major surface an array of interconnected electrodes (7) forming an entrance face, and on the opposite major surface an array of discrete electrodes connected to electrical circuitry (2) formed on a semiconductive substrate (1). Between the entrance faces of individual detector elements (17) is a network of further electrodes (15) of high thermal conductance which provides a high degree of thermal isolation for the detector elements (17) and prevents significant thermal cross-talk between adjacent detector elements (17).
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公开(公告)号：EP0454398B1
公开(公告)日：1995-08-02
申请号：EP91303599.4
申请日：1991-04-22
申请人： THORN EMI plc
IPC分类号： H01L37/02
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公开(公告)号：EP0400981A2
公开(公告)日：1990-12-05
申请号：EP90305864.2
申请日：1990-05-30
申请人： THORN EMI plc
IPC分类号： G01F1/28
CPC分类号： G01F1/28
摘要： A flow sensing device includes a semiconductor substrate 31 and a pivoted beam 1. Below one half of the beam is a channel 7 running throughout the substrate 31, and below the other half of the beam is a cavity 8. During operation, a differential force exists across the beam, and the amount of force required to compensate for this differential force is indicative of the rate of fluid flow.
摘要翻译： 流量检测装置包括半导体衬底31和枢转光束1.在光束的一半下方是穿过衬底31的通道7，并且在光束的另一半下面是空腔8.在操作期间，微分力 存在于横梁上，并且补偿该微分力所需的力的量表示流体流动的速率。
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公开(公告)号：EP0454398A2
公开(公告)日：1991-10-30
申请号：EP91303599.4
申请日：1991-04-22
申请人： THORN EMI plc
IPC分类号： H01L37/02
摘要： A thermal imaging device comprising a pyroelectric layer (8) having on one major surface an array of interconnected electrodes (7) forming an entrance face, and on the opposite major surface an array of discrete electrodes connected to electrical circuitry (2) formed on a semiconductive substrate (1). Between the entrance faces of individual detector elements (17) is a network of further electrodes (15) of high thermal conductance which provides a high degree of thermal isolation for the detector elements (17) and prevents significant thermal cross-talk between adjacent detector elements (17).
摘要翻译： 一种热成像装置，包括热电层（8），其在一个主表面上具有形成入射面的互连电极（7）的阵列，并且在相对的主表面上，连接到形成在基底上的电路（2）的分立电极阵列 半导电基板（1）。 在各个检测器元件（17）的入射面之间是具有高导热性的另外的电极（15）的网络，其为检测器元件（17）提供高度的热隔离并且防止相邻检测器元件之间的显着的热串扰 （17）。
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公开(公告)号：EP0345048A3
公开(公告)日：1990-10-03
申请号：EP89305495.7
申请日：1989-05-31
申请人： THORN EMI plc
IPC分类号： H01L27/16
摘要： A thermal imaging device comprises an array of pyroelectric detector elements 3, 4, 5 supported on a dielectric membrane 2. Thermally insulating pillars 6 provide an electrical path between the detector elements 3, 4, 5 and an integrated circuit 7.
摘要翻译： 热成像设备包括支撑在电介质膜2上的热电检测器元件3,4,5的阵列。热绝缘柱6在检测器元件3,4,5和集成电路7之间提供电路径。
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公开(公告)号：EP0345048A2
公开(公告)日：1989-12-06
申请号：EP89305495.7
申请日：1989-05-31
申请人： THORN EMI plc
IPC分类号： H01L27/16
摘要： A thermal imaging device comprises an array of pyroelectric detector elements 3, 4, 5 supported on a dielectric membrane 2. Thermally insulating pillars 6 provide an electrical path between the detector elements 3, 4, 5 and an integrated circuit 7.
摘要翻译： 热成像装置包括支撑在电介质膜2上的热电检测器元件3,4,5的阵列。绝热柱6在检测器元件3,4,5和集成电路7之间提供电路径。
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公开(公告)号：EP0274201A1
公开(公告)日：1988-07-13
申请号：EP87310195.0
申请日：1987-11-19
申请人： THORN EMI plc
IPC分类号： G01P15/125
CPC分类号： G01P15/0802 , G01P15/125
摘要： An accelerometer comprises a substrate (10) mode of silicon and a torsion beam (R4) spanning a V-shaped recess (11) formed in a major surface of the substrate. In one embodiment the centre of mass C of the torsion member is offset from the pivot axis XX, the accelerometer being responsive to a lateral acceleration acting transversely of the torsion beam. In another embodiment the centre of mass C lies on the pivot axis XX, the accelerometer being responsive to a rotational acceleration acting about the pivot axis. A multi-axis accelerometer includes one or more of the lateral and rotational accelerometer in combination.
摘要翻译： 加速度计包括硅的衬底（10）模式和跨越在衬底的主表面中形成的V形凹陷（11）的扭转梁（R4）。 在一个实施例中，扭转构件的质量中心C偏离枢转轴线XX，加速度计响应横向于扭转梁作用的横向加速度。 在另一个实施例中，质心C位于枢转轴线XX上，加速度计响应于围绕枢转轴线作用的旋转加速度。 多轴加速度计包括组合的一个或多个横向和旋转加速度计。
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