公开(公告)号：EP0434434A1

公开(公告)日：1991-06-26

申请号：EP90314037.4

申请日：1990-12-20

申请人： THORN EMI plc

发明人： Etienne, Stephen David ,  Sibbald, Alastair ,  Tagg, Wendy Iris Elizabeth

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/6708 ,  C23F1/08

摘要： Apparatus for back etching a body of material, such as a silicon wafer 12, comprises a fountain head 6 supplied with etchant 2 through an inlet pipe 4. The etchant 2 is forced through apertures 10 in a perforated member 8 and into contact with a surface of the silicon wafer 12 to be etched. Various configurations of apertures 10 are envisaged for maintaining the wafer 12 centrally over the fountain head 3 and also for imparting rotary motion to the wafer 12 to provide uniformity of etch.
The aparatus enables the silicon wafer to be supported solely by the etchant during the etching process, such that the wafer is subjected to minimal trauma.

摘要翻译： 用于背面蚀刻诸如硅晶片12的材料体的装置包括通过入口管4供应腐蚀剂2的喷泉头6.蚀刻剂2被迫穿过多孔构件8中的孔10并与表面 的待蚀刻硅晶片12。 设想孔10的各种构造，用于将晶片12保持在中心位于喷泉头3上方，并且还用于将旋转运动传递给晶片12以提供均匀的蚀刻。 该装置使得硅晶片在蚀刻过程中仅由蚀刻剂支撑，使得晶片受到最小的创伤。