公开(公告)号：EP1226604B1

公开(公告)日：2007-02-28

申请号：EP01945667.2

申请日：2001-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： MAEKAWA, Kaoru ,  HOSHINO, Satohiko ,  SUGIURA, Masahito ,  ALLEGRETTI, Federica Tokyo Electron Europe Limited

IPC: H01L21/312 ,  H01L21/768 ,  H01L21/316 ,  H01L21/3105

CPC classification number: H01L21/76835 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02299 ,  H01L21/02318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

Abstract: A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380 - 500 C over a duration of 5 - 180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：通过旋涂工艺在衬底上形成第一绝缘膜，在380-150℃的温度下对该第一绝缘膜施加固化工艺持续5-180秒 秒，并且通过旋涂工艺在第一绝缘膜上形成第二绝缘膜。