公开(公告)号：EP1655772A1

公开(公告)日：2006-05-10

申请号：EP04771570.1

申请日：2004-08-12

申请人： TOKYO ELECTRON LIMITED ,  ZEON CORPORATION ,  OHMI, Tadahiro

发明人： Kobayashi, Yasuo, c/o Tokyo Electron AT Ltd. ,  Kawamura, Kohei, c/o Tokyo Electron AT Ltd ,  Ohmi, Tadahiro ,  Teranoto, Akinobu ,  Sugimoto, Tatsuya ,  Yamada, Toshiro ,  Tanaka, Kimiaki

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420 °C or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，包括绝缘电影由氟化碳膜-并已经经历420℃或更低的热历史。 本发明的特征是没有包括在氟化碳膜-被氟化碳之前3原子％或更少的膜经受热历史氢原子的量。

公开(公告)号：EP1655772B1

公开(公告)日：2011-09-28

申请号：EP04771570.1

申请日：2004-08-12

申请人： TOKYO ELECTRON LIMITED ,  Zeon Corporation

发明人： Kobayashi, Yasuo, c/o Tokyo Electron AT Ltd. ,  Kawamura, Kohei, c/o Tokyo Electron AT Ltd ,  Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Sugimoto, Tatsuya ,  Yamada, Toshiro ,  Tanaka, Kimiaki

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.

公开(公告)号：EP2317543A3

公开(公告)日：2012-08-29

申请号：EP11154316.1

申请日：2002-10-31

申请人： Zeon Corporation

发明人： Sugawara, Mitsuru ,  Yamada, Toshiro ,  Sugimoto, Tatsuya ,  Tanaka, Kimiaki

IPC分类号： H01L21/3065 ,  H01L21/311 ,  C07C21/22 ,  C23C16/44

CPC分类号： C07C21/22 ,  C07C17/25 ,  C23C16/26 ,  C23C16/30 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116

摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

公开(公告)号：EP2317543A2

公开(公告)日：2011-05-04

申请号：EP11154316.1

申请日：2002-10-31

申请人： Zeon Corporation

发明人： Sugawara, Mitsuru ,  Yamada, Toshiro ,  Sugimoto, Tatsuya ,  Tanaka, Kimiaki

IPC分类号： H01L21/3065 ,  H01L21/311 ,  C07C21/22

CPC分类号： C07C21/22 ,  C07C17/25 ,  C23C16/26 ,  C23C16/30 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116

摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

摘要翻译： 用于等离子体反应的气体包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。