公开(公告)号：EP1655772B1

公开(公告)日：2011-09-28

申请号：EP04771570.1

申请日：2004-08-12

申请人： TOKYO ELECTRON LIMITED ,  Zeon Corporation

发明人： Kobayashi, Yasuo, c/o Tokyo Electron AT Ltd. ,  Kawamura, Kohei, c/o Tokyo Electron AT Ltd ,  Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Sugimoto, Tatsuya ,  Yamada, Toshiro ,  Tanaka, Kimiaki

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.

公开(公告)号：EP1655772A1

公开(公告)日：2006-05-10

申请号：EP04771570.1

申请日：2004-08-12

申请人： TOKYO ELECTRON LIMITED ,  ZEON CORPORATION ,  OHMI, Tadahiro

发明人： Kobayashi, Yasuo, c/o Tokyo Electron AT Ltd. ,  Kawamura, Kohei, c/o Tokyo Electron AT Ltd ,  Ohmi, Tadahiro ,  Teranoto, Akinobu ,  Sugimoto, Tatsuya ,  Yamada, Toshiro ,  Tanaka, Kimiaki

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420 °C or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，包括绝缘电影由氟化碳膜-并已经经历420℃或更低的热历史。 本发明的特征是没有包括在氟化碳膜-被氟化碳之前3原子％或更少的膜经受热历史氢原子的量。

公开(公告)号：EP2317543A3

公开(公告)日：2012-08-29

申请号：EP11154316.1

申请日：2002-10-31

申请人： Zeon Corporation

发明人： Sugawara, Mitsuru ,  Yamada, Toshiro ,  Sugimoto, Tatsuya ,  Tanaka, Kimiaki

IPC分类号： H01L21/3065 ,  H01L21/311 ,  C07C21/22 ,  C23C16/44

CPC分类号： C07C21/22 ,  C07C17/25 ,  C23C16/26 ,  C23C16/30 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116

摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

公开(公告)号：EP2317543A2

公开(公告)日：2011-05-04

申请号：EP11154316.1

申请日：2002-10-31

申请人： Zeon Corporation

发明人： Sugawara, Mitsuru ,  Yamada, Toshiro ,  Sugimoto, Tatsuya ,  Tanaka, Kimiaki

IPC分类号： H01L21/3065 ,  H01L21/311 ,  C07C21/22

CPC分类号： C07C21/22 ,  C07C17/25 ,  C23C16/26 ,  C23C16/30 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116

摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

摘要翻译： 用于等离子体反应的气体包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

公开(公告)号：EP1760769A1

公开(公告)日：2007-03-07

申请号：EP05743293.2

申请日：2005-05-30

申请人： National Institute of Advanced Industrial Science and Technology ,  ZEON CORPORATION

发明人： Sekiya, A., Nat. Inst. of Adv. Ind. Science&Tech. ,  Sugimoto, Tatsuya ,  Yamada, Toshiro ,  Mase, Takanobu

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  C07C41/18 ,  C07C43/17 ,  C07C45/513 ,  C07C45/673 ,  C07C45/82 ,  C07C49/227 ,  C07C2601/04 ,  C07F9/5352 ,  Y10T428/24479 ,  C07C49/687

摘要： A dry etching gas comprising a C 4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O 2 , O 3 , CO, CO 2 , CHF 3 , CH 2 F 2 , CF 4 , C 2 F 6 , and C 3 F 8 ; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.