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1.发明公开SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD 有权半导体元件，方法的半导体元件和等离子体CVD
公开(公告)号：EP1655772A4
公开(公告)日：2007-12-26
申请号：EP04771570
申请日：2004-08-12
申请人： TOKYO ELECTRON LTD , ZEON CORP , OHMI TADAHIRO
发明人： KOBAYASHI YASUO , KAWAMURA KOHEI , OHMI TADAHIRO , TERANOTO AKINOBU , SUGIMOTO TATSUYA , YAMADA TOSHIRO , TANAKA KIMIAKI
IPC分类号： H01L21/314
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.
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公开(公告)号：EP1453082A4
公开(公告)日：2007-10-17
申请号：EP02775447
申请日：2002-10-31
申请人： ZEON CORP
IPC分类号： H01L25/00 , C07C17/25 , C07C21/22 , C23C16/00 , H01L21/3065 , H01L21/311
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction which comprises a C5-6 chain perfluoroalkyne, preferably perfluoro-2-pentyne. This gas is suitable for use in the formation of a fine pattern by dry etching, formation of a thin film by CVD, or ashing. It is synthesized by contacting a dihydrofluoroalkane compound or monohydrofluoroalkene compound with a basic compound.
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3.发明公开APPARATUS FOR PRODUCING GAS, VESSEL FOR SUPPLYING GAS AND GAS FOR USE IN MANUFACTURING ELECTRONIC DEVICE 审中-公开设备用于气体关于将喂养和瓦斯的电子设备的制造生产，煤气罐
公开(公告)号：EP1744092A4
公开(公告)日：2012-02-29
申请号：EP05719181
申请日：2005-02-16
申请人： ZEON CORP
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