摘要:
A slicing method is disclosed in which a crystal ingot is sliced by a rotary blade (14) while the inner peripheral cutting edge of the blade (14) is kept in a highly rigid state. In particular, in a slicing machine which is adapted to slice out a crystal ingot (20) into thin pieces by use of an inner peripheral cutting edge 16 of a doughnut-shaped rotary blade (14), an axial force is previously applied to the rotary blade (14) prior to starting of the slicing to thereby displace the rotary blade 14 in the axial direction thereof and thus, while the rigidity of the inner peripheral cutting edge (16) is kept in a high state, the crystal ingot (20) is sliced so as to realize a highly accurate slicing operation.
摘要:
A slicing machine is disclosed in which a crystal ingot is sliced by a rotary blade (14) while the inner peripheral cutting edge (16) of the blade (14) is kept in a highly rigid state. In particular, in a slicing machine which is adapted to slice out a crystal ingot (20) into thin pieces by use of an inner peripheral cutting edge (16) of a doughnut-shaped rotary blade (14), an axial force is previously applied to the rotary blade (14) prior to starting of the slicing to thereby displace the rotary blade (14) in the axial direction thereof and thus, while the rigidity of the inner peripheral cutting edge (16) is kept in a high state, the crystal ingot (20) is sliced so as to realize a highly accurate slicing operation.
摘要:
A slicing machine is disclosed in which a crystal ingot is sliced by a rotary blade (14) while the inner peripheral cutting edge (16) of the blade (14) is kept in a highly rigid state. In particular, in a slicing machine which is adapted to slice out a crystal ingot (20) into thin pieces by use of an inner peripheral cutting edge (16) of a doughnut-shaped rotary blade (14), an axial force is previously applied to the rotary blade (14) prior to starting of the slicing to thereby displace the rotary blade (14) in the axial direction thereof and thus, while the rigidity of the inner peripheral cutting edge (16) is kept in a high state, the crystal ingot (20) is sliced so as to realize a highly accurate slicing operation.
摘要:
According to the present invention, the rotary axis 0 - 0 of a grindstone (22) is inclined to the rotary axis P - P of a semiconductor wafer (20) through an angle ϑ in a direction of the tangent line of the semiconductor wafer. Accordingly, a moving direction of abrasive grains of the grindstone (22) is divided into two including a component force A₁ in the grinding direction and a component force A₂ in the perpendicular direction, and these component forces increase the number of acting abrasive grains, so that the accuracy of the chamfering shape and the surface roughness can be improved. According to the present invention, the peripheral edge of the rotating semiconductor wafer is chamfered while the rotating grindstone (24) is reciprocatingly moved along the inclined grinding surface (25), whereby the number of the acting abrasive grains are increased, so that the accuracy of the chamfering shape and the surface roughness can be improved.