公开(公告)号：EP3311412A1

公开(公告)日：2018-04-25

申请号：EP16812463.4

申请日：2016-06-16

申请人： Tagore Technology, Inc.

发明人： SHAH, Manish, N. ,  DAS, Amitava

IPC分类号： H01L29/66 ,  H01L29/15 ,  H03K17/16 ,  H03K17/687

CPC分类号： H03K17/063 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7831 ,  H03K2017/066 ,  H03K2017/6875 ,  H03K2217/0081

摘要： A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.