Patent search ap:("Taylor Page Geoff W.") AND inv:"Taylor

1.

发明公开
SEMICONDUCTOR OPTOELECTRONIC INTEGRATED CIRCUIT AND METHODOLOGY FOR MAKING SAME EMPLOYING GATE-ALL-AROUND EPITAXIAL STRUCTURES 审中-公开

公开(公告)号：EP4500245A1

公开(公告)日：2025-02-05

申请号：EP23781587.3

申请日：2023-03-22

Applicant: Taylor, Geoff W.

Inventor： Taylor, Geoff W.

IPC: G02B6/13 , H01L21/8252 , H01L21/8258 , H01L27/06

2.

发明公开
SEMICONDUCTOR INTEGRATED CIRCUIT AND METHODOLOGY FOR MAKING SAME 审中-公开

公开(公告)号：EP4186101A1

公开(公告)日：2023-05-31

申请号：EP21862463.3

申请日：2021-08-23

Applicant: Taylor, Geoff W.

Inventor： Taylor, Geoff W.

IPC: H01L29/778 , H01L33/04

3.

发明公开
INTEGRATED CIRCUIT IMPLEMENTING A VCSEL ARRAY OR VCSEL DEVICE 审中-公开

公开(公告)号：EP3586369A1

公开(公告)日：2020-01-01

申请号：EP18757202.9

申请日：2018-02-22

Applicant: Taylor, Geoff W. , Cai, Jianhong

Inventor： Taylor, Geoff W. , Cai, Jianhong

IPC: H01L29/06 , H01L33/02 , H01L33/04 , H01S3/08 , H01S5/34

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