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    Thin film magnetic sensor and method of manufacturing the same
    2.
    发明公开
    Thin film magnetic sensor and method of manufacturing the same 有权
    DünnschichtmagnetischerFühlerund dessen Herstellungsverfahren

    公开(公告)号：EP1484617A2

    公开(公告)日：2004-12-08

    申请号：EP04012563.5

    申请日：2004-05-27

    申请人： The Foundation: The Research Institute for Electric and Magnetic Materials ,  Daido Steel Co., Ltd.

    发明人： Kobayashi, Nobukiyo ,  Shirakawa, Kiwamu ,  Kaneta, Yasushi, Daido Steel Co., Ltd.

    IPC分类号： G01R33/09

    CPC分类号： G01R33/09 ,  G11B5/3163 ,  G11B5/3183 ,  G11B5/3925 ,  Y10T29/49002

    摘要： A thin film magnetic sensor (20) comprises a pair of thin film yokes (24b,24c) each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap (24a) interposed therebetween; a GMR film (26) electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate (22) supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.

    摘要翻译： 薄膜磁传感器（20）包括由软磁性材料形成的一对薄膜磁轭（24b，24c），所述薄膜磁轭被布置成彼此间隔开间隔（24a）; 与所述一对所述薄膜磁轭电连接并具有高于所述软磁材料的电阻率的电阻率的GMR膜（26） 以及支撑薄膜磁轭和GMR膜并由绝缘非磁性材料形成的绝缘基板（22）。 包括由绝缘非磁性材料形成的层和GMR膜层的多层结构的间隙列布置在间隙内，并且GMR膜的厚度在间隙长度上是均匀的。