公开(公告)号：EP1482319A2

公开(公告)日：2004-12-01

申请号：EP04012425.7

申请日：2004-05-26

申请人： The Foundation: The Research Institute for Electric and Magnetic Materials ,  Daido Steel Co., Ltd.

发明人： Kobayashi, Nobukiyo ,  Shirakawa, Kiwamu ,  Yasushi, Kaneta c/o Daido Steel Co.Ltd R & D lab.

IPC分类号： G01R33/09

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3183 ,  G11B5/3903 ,  G11B5/3922 ,  Y10T29/49002

摘要： A thin film magnetic sensor (20) comprises a pair of first thin film yoke (24b) and second thin film yoke (24c) each formed of a soft magnetic material, the first and second thin film yokes being positioned to face each other with a gap (24a) interposed therebetween; a GMR film (26) having an electrical resistivity higher than that of the soft magnetic material and formed in the gap so as to be electrically connected to the first thin film yoke and the second thin film yoke; and an insulating substrate (22) made of an insulating nonmagnetic material and serving to support the first thin film yoke, the second thin film yoke and the GMR film. The GMR film is formed on a facing surface of the first thin film yoke positioned to face the second thin film yoke, and the length of the gap is defined by the thickness of the GMR film positioned on the facing surface of the first thin film yoke.

摘要翻译： 一种薄膜磁传感器（20）包括一对第一薄膜磁轭（24b）和第二薄膜磁轭（24c），每个第一薄膜磁轭（24b）和第二薄膜磁轭（24c）均由软磁材料形成，第一和第二薄膜磁轭定位成彼此面对 夹在它们之间的间隙（24a） GMR膜（26），其具有比软磁性材料的电阻率高的电阻率，并形成在间隙中以便电连接到第一薄膜轭和第二薄膜轭; 以及由绝缘非磁性材料制成并用于支撑第一薄膜轭，第二薄膜轭和GMR膜的绝缘基板（22）。 GMR膜形成在第一薄膜轭的面对第二薄膜轭的表面上，并且间隙的长度由位于第一薄膜轭的相对表面上的GMR膜的厚度限定 。