公开(公告)号：EP1744371A1

公开(公告)日：2007-01-17

申请号：EP05736664.3

申请日：2005-05-02

申请人： The Furukawa Electric Co., Ltd.

发明人： IKEDA, Nariaki, c/o THE FURUKAWA ELECTRIC CO., LTD ,  LI, Jiang, c/o THE FURUKAWA ELECTRIC CO., LTD. ,  YOSHIDA, Seikoh c/o THE FURUKAWA ELECTRIC CO., LTD

IPC分类号： H01L29/47 ,  H01L29/872

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nitride semiconductor layer containing at least one hetero junction structure of III-V nitride semiconductors having different band gap energies; a first anode electrode arranged on a surface of said III-V nitride semiconductor by Schottky junction; a second anode electrode which is arranged on the surface of said III- V nitride semiconductor layer by Schottky junction, is electrically connected with said first anode electrode and forms a higher Schottky barrier than a Schottky barrier formed by said first anode electrode; and an insulating protection film which is brought into contact with said second anode electrode and is arranged on the surface of said III-V nitride semiconductor layer.

摘要翻译： 具有低导通电阻的GaN半导体器件，当施加反向偏置电压时具有非常小的漏电流并且具有非常优异的耐电压特性，所述GaN半导体器件具有设置有III-V族氮化物半导体 包含具有不同带隙能量的III-V族氮化物半导体的至少一个异质结结构的层; 通过肖特基结布置在所述III-V族氮化物半导体的表面上的第一阳极电极; 通过肖特基结布置在所述III-V族氮化物半导体层的表面上的第二阳极电极与所述第一阳极电连接并形成比由所述第一阳极形成的肖特基势垒更高的肖特基势垒; 以及与所述第二阳极电极接触并设置在所述III-V族氮化物半导体层的表面上的绝缘保护膜。