公开(公告)号：EP2511995B1

公开(公告)日：2016-01-20

申请号：EP12167206.7

申请日：2009-10-07

申请人： The Government of the U.S.A., as represented by The Secretary of the Navy

发明人： Vurgaftman, Igor ,  Meyer, Jerry R. ,  Kim, Mijin ,  Bewley, William W. ,  Kim, Chul-soo ,  Lindle, James R. ,  Canedy, Chadwick L.

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

公开(公告)号：EP2511995A3

公开(公告)日：2014-03-05

申请号：EP12167206.7

申请日：2009-10-07

申请人： The Government of the U.S.A., as represented by The Secretary of the Navy

发明人： Vurgaftman, Igor ,  Meyer, Jerry R. ,  Kim, Mijin ,  Bewley, William W. ,  Kim, Chul-soo ,  Lindle, James R. ,  Canedy, Chadwick L.

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

公开(公告)号：EP2511995A2

公开(公告)日：2012-10-17

申请号：EP12167206.7

申请日：2009-10-07

申请人： The Government of the U.S.A., as represented by The Secretary of the Navy

发明人： Vurgaftman, Igor ,  Meyer, Jerry R. ,  Kim, Mijin ,  Bewley, William W. ,  Kim, Chul-soo ,  Lindle, James R. ,  Canedy, Chadwick L.

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

摘要翻译： 包括厚和富铟GaInSb孔的II型带间级联增益介质，两个或更多个GaSb孔，电子和空穴注入器被厚的AISb屏障隔开，电子注入器中的第一InAs电子阱的厚度， 以及电子注入器的总厚度和级联级的数量减少，过渡区域被插入增益介质的各个区域之间的界面处，包含Ga（InAAs）Sb的厚的分开的限制层设置在活性 增益区域和包层，并且优化包层的掺杂分布以最小化光学模式与InAs / AISb SL包覆层的最重掺杂部分的重叠。