公开(公告)号：EP3197901A1

公开(公告)日：2017-08-02

申请号：EP15778143.6

申请日：2015-09-25

申请人： The Regents of the University of California

发明人： YANG, Peidong ,  SUN, Jianwei ,  YU, Yi ,  CUI, Fan

IPC分类号： C07F1/08 ,  B22F9/24 ,  C01G3/00 ,  C01G3/04 ,  C01G3/05 ,  C01G3/08 ,  C07F7/08 ,  C07F7/12 ,  C07F7/18 ,  B22F1/00

CPC分类号： C07F7/0896 ,  B22F1/0025 ,  B22F9/24 ,  B82B3/00 ,  C07F1/08 ,  C07F7/12 ,  C07F7/1844 ,  H01B1/02

摘要： The disclosure provides methods to produce ultrathin metal nanowires and methods to produce ultrathin copper elongated nanostructures. Also claimed are the metal nanowires produced by these methods, and the use of the metal nanowires as transparent conductors. The claimed method comprises the steps of: a) forming a reaction mixture comprising a silane-based reducing agent, a copper metal salt and a surface ligand, wherein the surface ligand may also be a solvent; and b) heating and maintaining the reaction mixture at an elevated temperature between 1 to 48 hours with or without stirring. Examples for copper metal salts are Cul, CuBr, CuCI, CuF, CuSCN, CuCI
2 , CuBr
2 , CuF
2 , Cu(OH)
2 , Cu-D-gluconate, CuMo04, Cu(N03)2, Cu(Clo4) 2, CuP
2 0
7 , CuSe03, CuS0
4 , Cu-tartrate, Cu(BF
4 )
2 , Cu(NH
3 ) 4SO4, and including any hydrates of the foregoing. Examples for silane-based reducing agents are: trietylsilane, trimethylsilane, triisopropylsilane, triphenylsilane, tri-n-propylsilane, tri-n-hexylsilane, triethoxysilane, tris(trimethylsiloxy)silane, tris(trimethylsilyl)silane, di-tert- butylmethylsilane, diethylmethylsilane, diisopropylchlorosilane, dimethylchlorosilane, dimethylethoxysilane, diphenylmethylsilane, ethyldimethylsilane, ethyldichlorosilane, methyldichlorosilane, methyldiethoxysilane, octadecyldimethylsilane, phenyldimethylsilane, phenylmethylchlorosilane, l,l,4,4-tetramethyl-l,4-disilabutane, trichlorosilane, dimethylsilane, di-tert-butylsilane, dichlorosilane, diethylsilane, diphenylsilane, phenylmethylsilane, n-hexylsilane, n- octadecylsilane, n-octylsilane, and phenylsilane. Examples for surface ligands are oleylamine, trioctylphosphine oxide, oleic acid, 1,2-hexadecanediol, trioctylphosphine, or any combination of the foregoing. Examples for devices where said transparent conductors are of use are: LCD display, a LED display, a photovoltaic device, a touch panel, a solar panel, a light emitting diode (LED), an organic light emitting diode (OLED), an OLED display, and a electrochromic window.

摘要翻译： 本公开提供了生产超薄金属纳米线的方法和生产超薄铜细长纳米结构的方法。 还要求保护通过这些方法生产的金属纳米线，以及使用金属纳米线作为透明导体。 要求保护的方法包括以下步骤：a）形成包含硅烷基还原剂，铜金属盐和表面配体的反应混合物，其中表面配体也可以是溶剂; 和b）在搅拌或不搅拌下将反应混合物在1至48小时的升高的温度下加热并保持。 对于铜金属盐的实例是CUL，溴化亚铜，的CuCl，CUF，CuSCN，的CuCl 2，CuBr 2的，CuF2，铜（OH）2，的Cu-d-葡糖酸盐，CuMo04，铜（NO 3）2，铜（ClO4）2的，CuP207， CuSeO 3，CuSO 4，Cu-酒石酸盐，Cu（BF 4）2，Cu（NH 3）4 SO 4，并且包括前述的任何水合物。 为基于硅烷的还原剂的实例是：trietylsilane，三甲基硅烷，三异丙基硅烷，三苯基硅烷，三 - 正丙基硅烷，三 - 正己基硅烷，三乙氧基硅烷，三（三甲基硅氧基）硅烷，三（三甲基硅烷基）硅烷，二 - 叔butylmethylsilane，diethylmethylsilane ，diisopropylchlorosilane，二甲基氯硅烷，二甲基乙氧基硅烷，diphenylmethylsilane，ethyldimethylsilane，乙基二氯硅烷，甲基二氯硅烷，甲基二乙氧基硅烷，octadecyldimethylsilane，苯基二甲基硅烷，phenylmethylchlorosilane，1,1-，4,4-四甲基-1,4-二硅杂丁烷，三氯硅烷，二甲基硅烷，二叔丁基硅烷，二氯 二乙基硅烷，二苯基硅烷，苯基甲基硅烷，正己基硅烷，正十八烷基硅烷，正辛基硅烷和苯基硅烷。 表面配体的实例为油胺，氧化三辛基膦，油酸，1,2-十六烷二醇，三辛基膦或前述的任何组合。 其中所述透明导体有用的器件的例子是：LCD显示器，LED显示器，光伏器件，触摸板，太阳能电池板，发光二极管（LED），有机发光二极管（OLED），OLED 显示屏和电致变色窗口。