公开(公告)号：EP3325695A1

公开(公告)日：2018-05-30

申请号：EP16753686.1

申请日：2016-07-22

申请人： The University Of Warwick

发明人： MYRONOV, Maksym ,  COLSTON, Gerard ,  RHEAD, Stephen

IPC分类号： C30B25/02 ,  C30B25/10 ,  C23C16/32 ,  C30B29/36

CPC分类号： C30B25/10 ,  C23C16/325 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06 ,  C30B29/36

摘要： A method of growing epitaxial 3-SiC on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° C. and equal to or less than 1200° C., introducing a gas mixture into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor, a carbon source precursor and a carrier gas so as to deposit an epitaxial layer of 3-SiC on the single-crystal silicon.