公开(公告)号：EP2828887A1

公开(公告)日：2015-01-28

申请号：EP13763857.3

申请日：2013-03-21

申请人： Tokyo Electron Limited

发明人： RANJAN, Alok ,  RALEY, Angelique

IPC分类号： H01L21/8238

CPC分类号： H01L21/0206 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L29/4983 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/6656

摘要： A method for performing a spacer etch process is described. The method includes providing a gate structure on a substrate having a low-k spacer material conformally applied over the gate structure, and performing a spacer etch process sequence to partially remove the spacer material from the gate structure and the substrate, while retaining a sidewall spacer positioned along a sidewall of the gate structure. The spacer etch process sequence may include depositing a spacer protection layer on an exposed surface of said spacer material, and performing one or more etching processes to selectively and anisotropically remove the spacer protection layer and the spacer material to leave behind the sidewall spacer on the sidewall of the gate structure, wherein, while being partly or fully consumed by the one or more etching processes, the spacer protection layer exhibits a reduced variation in composition and/or dielectric constant.

摘要翻译： 描述了一种用于执行间隔物蚀刻的工艺方法。 该方法包括在一个基片提供栅极结构，其具有共形地施加在栅结构上的低k间隔物材料;以及执行间隔物蚀刻工艺顺序以部分地从该栅极结构和基板除去所述间隔物材料，同时保持侧壁间隔物 沿着所述栅极结构的侧壁上的位置。 间隔物蚀刻工艺序列可以包括在所述间隔件材料的暴露表面上沉积间隔物的保护层，并进行一个或多个蚀刻工艺，以选择性和各向异性移除垫片保护层和间隔物材料的侧壁间隔物，以留下在侧壁 该栅极结构的，worin，同时被部分或完全地由一个或多个蚀刻工艺所消耗，间隔保护层表现出在组合物和/或介电常数的变化减小。