公开(公告)号：EP1994566B1

公开(公告)日：2018-01-17

申请号：EP07707920.0

申请日：2007-01-26

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： TAKAYA, Hidefumi ,  HAMADA, Kimimori ,  MIYAGI, Kyosuke

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor 100 has a P− body region and an N− drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P− body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−− diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P− body region and the P diffusion region, is formed. The P−− diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−− diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.

公开(公告)号：EP1994566A1

公开(公告)日：2008-11-26

申请号：EP07707920.0

申请日：2007-01-26

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： TAKAYA, Hidefumi ,  HAMADA, Kimimori ,  MIYAGI, Kyosuke

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor 100 has a P− body region and an N− drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P− body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−− diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P− body region and the P diffusion region, is formed. The P−− diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−− diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.