公开(公告)号：EP1649526A4

公开(公告)日：2012-07-25

申请号：EP04816786

申请日：2004-07-26

申请人： UNIV CALIFORNIA

发明人： BOCIAN DAVID F ,  LINDSEY JONATHAN ,  LIU ZHIMING ,  YASSERI AMIR A ,  MISRA VEENA ,  ZHAO QIAN ,  LI QILIANG ,  SURTHI SHYAM ,  LOEWE ROBERT S

IPC分类号： H01L51/00 ,  G11C13/00 ,  G11C13/02 ,  H01L21/477 ,  H01L27/28 ,  H01L51/30 ,  H01L51/40 ,  H01M4/60 ,  H01M14/00

CPC分类号： H01L51/0002 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0008 ,  H01L51/001 ,  H01L51/0026 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0595 ,  H01L51/4213 ,  H01M4/60 ,  H01M14/005 ,  Y02E10/549

摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

公开(公告)号：EP1449218A4

公开(公告)日：2006-03-22

申请号：EP02807197

申请日：2002-10-07

申请人： UNIV CALIFORNIA

发明人： KUHR WERNER G ,  BOCIAN DAVID F ,  LIU ZHIMING ,  YASSERI AMIR

IPC分类号： G01N33/483 ,  G11C13/02 ,  C12N15/09 ,  G01N27/403 ,  G01N27/416 ,  G01N33/543 ,  G01N37/00 ,  G11C11/56 ,  H01L27/28 ,  H01L51/05 ,  H01M4/38 ,  H01M4/58 ,  H01M4/60 ,  H01M6/40 ,  H01M10/04

CPC分类号： H01L29/82 ,  B82Y10/00 ,  G01N27/3278 ,  G01N33/5438 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/77 ,  H01M2/02 ,  H01M4/38 ,  H01M4/602 ,  H01M6/40 ,  H01M10/0436

摘要： An electrochemical cell array including an array of silver layers fabricated directly on a substrate, an insulator covering the silver conductor array and a gold array deposited on top of the insulator. Wells are patterned at regions where the gold conductor array overlaps the silver conductor array forming conductor rings in the walls and/or floors of the wells. A molecule can then be coupled to the surface of the one or more conductors in each well.

公开(公告)号：EP1809473A4

公开(公告)日：2010-12-15

申请号：EP05730161

申请日：2005-03-10

申请人： UNIV CALIFORNIA ,  UNIV NORTH CAROLINA STATE

发明人： BOCIAN DAVID F ,  LIU ZHIMING ,  LINDSEY JONATHAN S

IPC分类号： B32B27/00 ,  B32B27/16 ,  B32B33/00 ,  H01L51/00

CPC分类号： H01L51/0089 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0595

公开(公告)号：EP1474832A4

公开(公告)日：2007-08-29

申请号：EP02805137

申请日：2002-12-12

申请人： UNIV CALIFORNIA ,  UNIV NORTH CAROLINA STATE

发明人： MISRA VEENA ,  BOCIAN DAVID F ,  KUHR WERNER G ,  LINDSEY JONATHAN S

IPC分类号： G11C11/56 ,  H01L21/8247 ,  G11C13/02 ,  H01L27/00 ,  H01L27/115 ,  H01L27/28 ,  H01L29/788 ,  H01L29/792 ,  H01L51/05

CPC分类号： H01L27/283 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/53 ,  H01L51/052 ,  H01L51/0529 ,  Y10S977/721 ,  Y10S977/887 ,  Y10S977/937

摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.