公开(公告)号：EP2340589A4

公开(公告)日：2014-03-05

申请号：EP09822404

申请日：2009-10-07

申请人： US GOV SEC NAVY

发明人： VURGAFTMAN IGOR ,  MEYER JERRY R ,  KIM MIJIN ,  BEWLEY WILLIAM W ,  KIM CHUL-SOO ,  LINDLE JAMES R ,  CANEDY CHADWICK L

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

公开(公告)号：EP2643908A4

公开(公告)日：2017-12-13

申请号：EP11843179

申请日：2011-11-21

申请人： US GOV SEC NAVY

发明人： VURGAFTMAN IGOR ,  MEYER JERRY R ,  CANEDY CHADWICK L ,  BEWLEY WILLIAM W ,  LINDLE JAMES R ,  KIM CHUL-SOO ,  KIM MIJIN

IPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/3401 ,  H01S5/3422 ,  H01S5/34306

摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium comprises an active gain region comprising a plurality of cascading stages, each of the cascading stages including an active gain quantum well region comprising one or more active electron quantum wells and one or more active hole quantum wells, a hole injector region comprising one of one Ga(In)Sb hole quantum wells and three Ga(In)Sb hole quantum wells, and an electron injector region comprising one or more electron quantum wells. At least one parameter of the interband cascade medium is configured such that an energy separation of ”E ‰¥ 100 meV is maintained between the top valence state in the hole injector region and the valence band maximum in the one or more active hole quantum wells.