摘要:
The present invention relates to an (amide amino alkane) metal compound represented by the formula (1):
wherein M represents a metal atom; R 1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R 2 and R 3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R 2 and R 3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R 1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R 1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R 1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.
摘要:
An organoruthenium complex represented by the general formula (1-1):
wherein X represents a group represented by the general formula (1-2):
wherein R a and R b independently represent a linear or branched alkyl group having 1 to 5 carbon atoms; Y represents a group represented by the above general formula (1-2), or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds,
bis(acetylacetonato)(1,5-hexadiene)ruthenium, and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, and show excellent stability against moisture, air and heat. These ruthenium complexes are suitable for the film formation by a CVD method.