(AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND
    1.
    发明公开
    (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND 有权
    (AMID氨基的烷),产生一个含金属薄膜这种金属连接金属化合物和方法

    公开(公告)号:EP2636674A1

    公开(公告)日:2013-09-11

    申请号:EP11838078.1

    申请日:2011-11-02

    摘要: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1):

    wherein
    M represents a metal atom;
    R 1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms;
    R 2 and R 3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R 2 and R 3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound;
    Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and
    n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that
    the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded;
    the metal compounds in which M is Mg (Magnesium) and R 1 is methyl group are excluded;
    the metal compounds in which M is Zn (Zinc) and R 1 is methyl group are excluded;
    the metal compounds in which M is Bi (Bismuth) and R 1 is t-butyl group are excluded; and
    in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.

    摘要翻译: 本发明涉及由下式表示(烷烃酰胺氨基)与金属化合物(1):M worin darstellt金属原子; R 1表示具有1至6个碳原子的直链,支链或环状烷基; R 2和R 3可以是相同的,或从海誓山盟不同,并且各自unabhängigdarstellt的直链或具有1至3个碳原子,或R 2和R 3可以形成一个5元或6 substituiertem奥德unsubstituiertem支链烷基 - 元与氮原子一起环它们所约束; Z代表具有1至10个碳原子(它的一部分可以任选形成环)的直链或支链亚烷基; 和n darstellt一些配体,所有这一切是等于金属(M)的化合价,并且在从1至3的整数darstellt; 其条件所做的金属化合物,其中M是Li(锂),BE(铍),Ge(锗),或Nd(钕)被排除在外; 其中,M为Mg(镁)和R 1中的金属化合物是甲基被排除; 其中,M的金属化合物是Zn(锌)和R 1是甲基基团排除在外; 其中M为Bi(铋)和R 1中的金属化合物是叔丁基被排除; 和在其中n是2或更大时,两个或更多个配体可以是相同的,或从不同的海誓山盟例; 和使用了该金属化合物的含有金属的薄膜的方法。

    ORGANORUTHENIUM COMPLEX, AND METHOD FOR PRODUCTION OF RUTHENIUM THIN FILM USING THE RUTHENIUM COMPLEX
    2.
    发明公开
    ORGANORUTHENIUM COMPLEX, AND METHOD FOR PRODUCTION OF RUTHENIUM THIN FILM USING THE RUTHENIUM COMPLEX 审中-公开
    有机络合物复合物及使用钌络合物生产钌薄膜的方法

    公开(公告)号:EP2053036A1

    公开(公告)日:2009-04-29

    申请号:EP07791413.3

    申请日:2007-07-26

    IPC分类号: C07C49/92 C23C16/08 C07F15/00

    摘要: An organoruthenium complex represented by the general formula (1-1):

    wherein X represents a group represented by the general formula (1-2):

    wherein R a and R b independently represent a linear or branched alkyl group having 1 to 5 carbon atoms;
    Y represents a group represented by the above general formula (1-2), or a linear or branched alkyl group having 1 to 8 carbon atoms;
    Z represents a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms; and
    L represents an unsaturated hydrocarbon compound having at least two double bonds,

    bis(acetylacetonato)(1,5-hexadiene)ruthenium, and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, and show excellent stability against moisture, air and heat. These ruthenium complexes are suitable for the film formation by a CVD method.

    摘要翻译: 由通式(1-1)表示的有机钌络合物:其中X表示由通式(1-2)表示的基团:其中Ra和Rb独立地表示具有1至5个碳原子的直链或支链烷基; Y表示由上述通式(1-2)表示的基团或者碳原子数为1〜8的直链状或支链状的烷基。 Z表示氢原子或具有1至4个碳原子的烷基; L表示具有至少两个双键的不饱和烃化合物,双(乙酰丙酮)(1,5-己二烯)钌和双(乙酰丙酮)(1,3-戊二烯)钌具有低熔点, 水分,空气和热量。 这些钌络合物适合用CVD法成膜。