ROLL-TO-ROLL CHEMICAL VAPOR DEPOSITION SYSTEM
    1.
    发明公开
    ROLL-TO-ROLL CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
    化学体系对于蒸汽沉积在多重角色

    公开(公告)号:EP2441085A2

    公开(公告)日:2012-04-18

    申请号:EP10786594.1

    申请日:2010-06-03

    CPC classification number: C23C16/545 C23C16/45502 C30B25/14

    Abstract: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

    CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION SYSTEM
    2.
    发明公开
    CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
    WITH连续供应化学气相沉积系统

    公开(公告)号:EP2441086A2

    公开(公告)日:2012-04-18

    申请号:EP10786595.8

    申请日:2010-06-03

    CPC classification number: C23C16/54 C23C16/4582 C30B25/025 C30B35/00

    Abstract: A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.

    MULTI-CHAMBER CVD PROCESSING SYSTEM
    3.
    发明公开
    MULTI-CHAMBER CVD PROCESSING SYSTEM 审中-公开
    多功能插槽CVD处理系统

    公开(公告)号:EP2735020A2

    公开(公告)日:2014-05-28

    申请号:EP12815170.1

    申请日:2012-07-02

    CPC classification number: C23C16/4582 C23C16/54 C30B25/025 C30B35/00

    Abstract: A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable.

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