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公开(公告)号：EP0476865A1
公开(公告)日：1992-03-25
申请号：EP91307908.3
申请日：1991-08-29
CPC分类号： C07C317/28 , C07C317/24 , C07C2601/14 , G03F7/039 , G03F7/0758
摘要： A resist material of chemical amplified type comprising (a) a polymer such as a polymer of 1-methylcycloalkyl 4-ethenylphenoxyacetate and 4-hydroxystyrene, etc., (b) a photo-sensitive compound capable of generating an acid when exposed to light, and (c) a solvent for dissolving both the components (a) and (b) is excellent in heat resistance and adhesiveness to substrates, capable of maintaining stable pattern dimension from exposure to light to heat treatment, and capable of forming patterns using deep ultraviolet light, KrF excimer laser light, etc.
摘要翻译： 化学的抗蚀剂材料放大型，其包含（a）聚合物：例如1- methylcycloalkyl的聚合物4- ethenylphenoxyacetate和4-羟基苯乙烯等，（b）能够在酸产生的光敏化合物当暴露于光时， 和（c）用于溶解的溶剂两种组分（a）和（b）具有优异的耐热性和密合性的底物，能够从曝光维持稳定的图案尺寸的光进行热处理，以及能够使用深紫形成图案的 光，KrF准分子激光等
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公开(公告)号：EP0440374A2
公开(公告)日：1991-08-07
申请号：EP91300562.5
申请日：1991-01-24
CPC分类号： G03F7/039 , Y10S430/108 , Y10S430/11 , Y10S430/122 , Y10S430/124 , Y10S430/126
摘要： A resist material comprising (a) a polymer having a monomer unit having a special functional group, a monomer unit having a phenolic hydroxyl group, and if necessary a third monomer unit, (b) a photoacid generator, and (c) a solvent can provide a resist film excellent in heat resistance and adhesiveness to a substrate when exposed to light with 300 nm or less such as deep UV light, KrF excimer laser light, etc., and is suitable for forming ultrafine patterns.
摘要翻译： 一种抗蚀剂材料，其包含（a）具有特殊官能团的单体单元的聚合物，具有酚羟基的单体单元，如果需要的话，第三单体单元，（b）光酸产生剂，和（c）溶剂罐 提供当暴露于300nm以下的光（例如深紫外光，KrF准分子激光等）时，对基板的耐热性和粘附性优异的抗蚀剂膜，并且适合于形成超细图案。
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公开(公告)号：EP0440374B1
公开(公告)日：1997-04-16
申请号：EP91300562.5
申请日：1991-01-24
CPC分类号： G03F7/039 , Y10S430/108 , Y10S430/11 , Y10S430/122 , Y10S430/124 , Y10S430/126
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公开(公告)号：EP0440374A3
公开(公告)日：1992-04-29
申请号：EP91300562.5
申请日：1991-01-24
CPC分类号： G03F7/039 , Y10S430/108 , Y10S430/11 , Y10S430/122 , Y10S430/124 , Y10S430/126
摘要： A resist material comprising (a) a polymer having a monomer unit having a special functional group, a monomer unit having a phenolic hydroxyl group, and if necessary a third monomer unit, (b) a photoacid generator, and (c) a solvent can provide a resist film excellent in heat resistance and adhesiveness to a substrate when exposed to light with 300 nm or less such as deep UV light, KrF excimer laser light, etc., and is suitable for forming ultrafine patterns.
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公开(公告)号：EP0440375B1
公开(公告)日：1994-07-13
申请号：EP91300563.3
申请日：1991-01-24
IPC分类号： C07C317/28 , C07C317/30
CPC分类号： G03F7/039
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公开(公告)号：EP0440375A1
公开(公告)日：1991-08-07
申请号：EP91300563.3
申请日：1991-01-24
IPC分类号： C07C317/28 , C07C317/30
CPC分类号： G03F7/039
摘要： A diazodisulfone of the formula:
wherein R¹ is a C₃₋₈ branched or cyclic alkyl group, and R² is a C₁₋₈ straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.摘要翻译： 具有下式的重氮二砜：
其中R 1为C 3-8支链或环状烷基，R 2为C 1-8直链，支链或环状烷基，作为光酸 发生器用于300nm或更小的光的光致抗蚀剂材料中。
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