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公开(公告)号：EP0579420A3
公开(公告)日：1995-06-14
申请号：EP93305170.8
申请日：1993-07-01
发明人： Tani, Yoshiyuki, c/o Matsushita El. Ind. Co., Ltd. , Endo, Masayuki, c/o Matsushita El. Ind. Co., Ltd. , Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho
IPC分类号： G03F7/004
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: -OCH₂OR¹ wherein R¹ is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.
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2.发明公开Negative working resist material and pattern forming process 失效Negativ-arbeitendes Schutzlackmaterial und Verfahren zur Herstellung von Mustern。
公开(公告)号：EP0579420A2
公开(公告)日：1994-01-19
申请号：EP93305170.8
申请日：1993-07-01
发明人： Tani, Yoshiyuki, c/o Matsushita El. Ind. Co., Ltd. , Endo, Masayuki, c/o Matsushita El. Ind. Co., Ltd. , Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho
IPC分类号： G03F7/004
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: -OCH₂OR¹ wherein R¹ is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.
摘要翻译： 一种负性抗蚀剂组合物，其包含（a）碱溶性树脂，（b）具有至少两个下式的-OCH 2 OR 1的芳族化合物，其中R 1是烷基或芳烷基，（c）光酸 发生器和（d）溶剂，由于高透光率和高灵敏度而暴露于深UV，KrF准分子激光等时，可以形成具有高分辨率的精细图案。
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公开(公告)号：EP0579420B1
公开(公告)日：1997-03-05
申请号：EP93305170.8
申请日：1993-07-01
发明人： Tani, Yoshiyuki, c/o Matsushita El. Ind. Co., Ltd. , Endo, Masayuki, c/o Matsushita El. Ind. Co., Ltd. , Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Yasuda, Takanori, c/o Tokyo Kenkyusho
IPC分类号： G03F7/004
CPC分类号： G03F7/0382 , G03F7/0045
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