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公开(公告)号：EP0136839A3
公开(公告)日：1986-11-26
申请号：EP84306035
申请日：1984-09-03
申请人： XEROX CORPORATION
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/0062 , H01L33/0095 , H01S5/34313 , H01S5/3432 , Y10S438/909
摘要： The method of tuning the wavelength of a quantum well laser to a shorter emission wavelength is accomplished by the step of thermal annealing the laser for a prescribed period of time, the length of the period and the temperature of annealing being based upon what primary emission wavelength is desired. For good results, the annealing is conducted in an elemental anti-outdiffusion environment or the laser structure to be annealed is encapsulated so that any outdiffusion of laser elemental constituents is discouraged during thermal annealing. In an exemplary illustration of the invention, laser heterostructures of the GaAl/GaAlAs regime are utilized and annealed for several hours in an As environment to selectively reduce the emission wavelength by as much as 20. or more. The As environment prevents the outdiffusion of As from the GaAl GaAlAs heterostructure during thermal annealing, elemental As having the lowest temperature of vaporization of elemental Ga, Al and As. High temperature annealing above this temperature may tend to drive elemental As from the heterostructure thereby changing its operating characteristics. Thermal annealing may be carried out in an annealing furnace, generally sealed in a quartz ampoule, or in a thermal pulse annealing system wherein properly prepared wafer samples may be alternately heated uniformly for prescribed periods of time at predetermined temperatures and periodically checked to determine the amount emission wavelength shift as compared to the set emission wavelength desired to be achieved for the laser.
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公开(公告)号：EP0136839B1
公开(公告)日：1990-10-24
申请号：EP84306035.1
申请日：1984-09-03
申请人： XEROX CORPORATION
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/0062 , H01L33/0095 , H01S5/34313 , H01S5/3432 , Y10S438/909
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公开(公告)号：EP0136839A2
公开(公告)日：1985-04-10
申请号：EP84306035.1
申请日：1984-09-03
申请人： XEROX CORPORATION
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/0062 , H01L33/0095 , H01S5/34313 , H01S5/3432 , Y10S438/909
摘要： The method of tuning the wavelength of a quantum well laser to a shorter emission wavelength is accomplished by the step of thermal annealing the laser for a prescribed period of time, the length of the period and the temperature of annealing being based upon what primary emission wavelength is desired. For good results, the annealing is conducted in an elemental anti-outdiffusion environment or the laser structure to be annealed is encapsulated so that any outdiffusion of laser elemental constituents is discouraged during thermal annealing. In an exemplary illustration of the invention, laser heterostructures of the GaAl/GaAlAs regime are utilized and annealed for several hours in an As environment to selectively reduce the emission wavelength by as much as 20. or more. The As environment prevents the outdiffusion of As from the GaAl GaAlAs heterostructure during thermal annealing, elemental As having the lowest temperature of vaporization of elemental Ga, Al and As. High temperature annealing above this temperature may tend to drive elemental As from the heterostructure thereby changing its operating characteristics. Thermal annealing may be carried out in an annealing furnace, generally sealed in a quartz ampoule, or in a thermal pulse annealing system wherein properly prepared wafer samples may be alternately heated uniformly for prescribed periods of time at predetermined temperatures and periodically checked to determine the amount emission wavelength shift as compared to the set emission wavelength desired to be achieved for the laser.
摘要翻译： 将量子阱激光器的波长调谐到较短的发射波长的方法通过对激光器进行热退火预定时间段的步骤来完成，周期的长度和退火的温度基于什么主发射波长 是期望的。 为了获得良好的结果，退火在元素抗向外扩散环境中进行，或者要退火的激光器结构被封装，从而在热退火期间不鼓励激光元素成分的任何向外扩散。 在本发明的示例性说明中，GaAs / GaAlAs体系的激光异质结构被利用并且在As环境中退火几个小时以选择性地将发射波长减小多达20或更多。 As环境防止GaAlGaAlAs异质结构在热退火过程中As向外扩散，元素As具有元素Ga，Al和As的最低蒸发温度。 高于该温度的高温退火可能倾向于从异质结构驱使元素As，从而改变其工作特性。 热退火可以在通常密封在石英安瓿中的退火炉中进行，或者在热脉冲退火系统中进行，其中适当制备的晶片样品可以在预定温度下均匀地加热规定的时间周期并且定期检查以确定 发射波长偏移与期望为激光达到的设定发射波长相比。
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