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26 条记录 (耗时 0.011 秒)

    Phased array semiconductor lasers
    1.
    发明公开
    Phased array semiconductor lasers 失效
    相位阵列半导体激光器

    公开(公告)号：EP0239352A3

    公开(公告)日：1988-09-28

    申请号：EP87302498

    申请日：1987-03-24

    申请人： XEROX CORPORATION

    发明人： Streifer, William

    IPC分类号： H01S03/23 ,  H01S03/19

    CPC分类号： H01S5/4031

    摘要： A phased array semiconductor laser (30) favoring emission in the 1 st or N th supermode over other potential supermodes of the laser comprising a plurality of spatially disposed laser elements (32-41) formed relative to an active region to provide optical cavities for light wave generation and propagation under lasing conditions and wherein the optical field of laser elements are coupled into the optical cavities of adjacent laser elements to provide a phase locked condition across the array. The position of the outer laser element (32,41) at each end of the array are spaced closer (D¹) to adjacent laser element compared to the spacing (D) provided between all the other of laser elements (33-40) such that the coupling across the array is enhanced to produce at least one supermode with an intensity envelope which for its most part is substantially uniform and rectangular shaped. The optimized optical coupling coefficient between the outer lasing elements and their adjacent laser elements is √2 K, where K is the optical coupling coefficient between the other laser elements. The optical coupling coefficient of √2 K between these outer lasing elements, however, may be within the range of 80% to 120% of √2 K. The phase of some of the laser elements in the array may be reversed 180°.

    Semiconductor injection laser
    2.
    发明公开
    Semiconductor injection laser 失效
    注入半导体激光器。

    公开(公告)号：EP0047601A1

    公开(公告)日：1982-03-17

    申请号：EP81303832.0

    申请日：1981-08-21

    申请人： XEROX CORPORATION

    发明人： Fekete, Dan H. ,  Scifres, Donald R. ,  Streifer, William

    IPC分类号： H01S3/23 ,  H01S3/10

    CPC分类号： H01S5/4006 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06216 ,  H01S5/1003 ,  H01S5/1032

    摘要： A semiconductor injection laser (10) is provided with an integrated optical injector means on the same substrate as the laser, which has an optical emitter region non-collinear with the axis of optical emission from the laser but optically coupled to the laser at one or more points along its length. The optical injector means is independently operative prior to or simultaneously with the independently operated laser to inject radiation into the laser optical emitter region to decrease the response time of the laser to pulsed current modulation.

    Information storage systems
    3.
    发明公开
    Information storage systems 失效
    Vorrichtungen zur Informationsspeicherung。

    公开(公告)号：EP0092420A1

    公开(公告)日：1983-10-26

    申请号：EP83302199.1

    申请日：1983-04-19

    申请人： XEROX CORPORATION

    发明人： Knight, Gordon ,  Scifres, Donald R. ,  Streifer, William

    IPC分类号： G11B7/14

    CPC分类号： G11B7/127 ,  G11B7/14

    摘要： An optical memory system in which plural data tracks, or plural areas of a single data track, of the optical memory are recorded simultaneously by a system including an integrated injection diode laser array. Each laser of the array (2) has its own drive and is separately modulated. Flat field collector and objective lenses image the points of light eminating form the plane of the broad emitting surface of the laser array (2) onto the optical memory (14) without defocusing. Placement of the longitudinal axis of the emitting surface transverse to the desired positions of the data tracks of the optical memory (14) will provide data tracks separated by the corresponding separation between the lasers of the array (2) (assuming a 1 to 1 optical system), with increased track density being achieved by orienting the longitudinal axis of the emitting surface of the array (2) at a non-transerse angle to the desired positions of the data tracks. Plural areas of one data track can be recorded simultaneously by having the longitudinal axis of the emitting surface of the array (2) aligned directly over the desired position of that data track, with this alignment also providing a system that is not duty cycle limited. Since uniform output from all lasers of an array (2) is difficult to achieve, each laser output can be monitored (such as by monitoring its back facet output by an associated on-chip detector) so that each output is adjusted by a feedback circuit. For plural track readout, drives for the lasers of the array (2) would be reduced so that the lasers operate CW. Since the laser array (2) is solid state in nature the proposed system does not suffer from the relative ositional instabilities found in a system using plural gas lasers and, accordingly, the plural write beams would be maintained in desired alignment. In addition, the input bandwidth of the optical memory system would be increased significantly.

    摘要翻译： 其中由包括集成注入二极管激光器阵列的系统同时记录光学存储器的多个数据磁道或单个数据磁道的多个区域的光学存储器系统。 阵列（2）的每个激光器都有自己的驱动器，并且被单独调制。 平面场收集器和物镜将从激光阵列（2）的广泛发射表面的平面排出的光点形成在光学存储器（14）上而不散焦，将发射表面的纵向轴线横向于期望的 光学存储器（14）的数据轨道的位置将提供由阵列（2）的激光器（假设1至1个光学系统）之间的相应间隔分开的数据轨道，其中增加的轨道密度通过使纵向 阵列（2）的发射表面的轴线与数据轨道的期望位置成非离散角。 可以通过使阵列（2）的发射表面的纵向轴线直接对准该数据轨道的期望位置同时记录一个数据轨道的多个区域，该对准还提供不是占空比限制的系统。 由于难以实现阵列（2）的所有激光器的均匀输出，因此可以监测每个激光输出（例如通过监视相关的片上检测器的背面输出），使得每个输出由反馈电路 。 对于多个轨道读出，阵列（2）的激光器的驱动将被减小，使得激光器工作CW。 由于激光阵列（2）本质上是固态，因此所提出的系统不会受到使用多个气体激光器的系统中发现的相对不稳定性的影响，因此多个写入光束将保持在期望的对准状态。 此外，光存储器系统的输入带宽将显着增加，

    A heterojunction semiconductor laser
    5.
    发明公开
    A heterojunction semiconductor laser 失效
    激光半导体异质结。

    公开(公告)号：EP0026062A1

    公开(公告)日：1981-04-01

    申请号：EP80303095.6

    申请日：1980-09-04

    申请人： XEROX CORPORATION

    发明人： Burnham, Robert D. ,  Scifres, Donald R. ,  Streifer, William

    IPC分类号： H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/2275

    摘要： A heterostructure semiconductor laser (40) is characterized by having a channeled mesa (44) contiguous with the top surface (55) of the laser substrate (52). The channeled mesa (44) comprises an elongated mesa with an elongated channel (50) formed in the top surface (47, 49) of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.

    Semiconductor lasers
    7.
    发明公开
    Semiconductor lasers 失效
    半导体激光器

    公开(公告)号：EP0203810A3

    公开(公告)日：1988-06-29

    申请号：EP86304023

    申请日：1986-05-27

    申请人： XEROX CORPORATION

    发明人： Burnham, Robert D. ,  Paoli, Thomas L. ,  Scifres, Donald R. ,  Streifer, William

    IPC分类号： H01S03/19 ,  H01S03/18 ,  H01L33/00

    CPC分类号： H01S5/06255 ,  H01S5/06243 ,  H01S5/10 ,  H01S5/1032 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/4068

    摘要： A hybrid index/gain-guided semiconductor laser (10) has a gain guide type body with index waveguide attributes characterised by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provides regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region. By varying the pumping current to the regions of the axially-offset current confinement means, one can selectively change the refractive index differences established between the axially offset current confinement means regions and the optical cavity region therebetween. The primary and offset current confinement geometry may be utilized in single or multuple element lasers.