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122 条记录 (耗时 0.019 秒)

    Phase-separated dielectric structure fabrication process
    5.
    发明公开
    Phase-separated dielectric structure fabrication process 有权
    隔离相Dielektrizitätsstruktur制造方法

    公开(公告)号：EP1978572A3

    公开(公告)日：2011-05-18

    申请号：EP08152980.2

    申请日：2008-03-19

    申请人： Xerox Corporation

    发明人： Wu, Yiliang ,  Mahabadi, Hadi K. ,  Ong, Beng S. ,  Smith, Paul F.

    IPC分类号： H01L51/05 ,  H01L27/00

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    Device with small molecular thiophene compound
    7.
    发明公开
    Device with small molecular thiophene compound 有权
    装置具有短链噻吩低聚物

    公开(公告)号：EP1605532A3

    公开(公告)日：2009-11-11

    申请号：EP05105045.8

    申请日：2005-06-09

    申请人： Xerox Corporation

    发明人： Ong, Beng S. ,  Liu, Peng ,  Birau, Maria ,  Wu, Yiliang

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504

    摘要： An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A)
       
    wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R 1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R 1 at the 3-position of one thiophene unit and at the 3'-position of the other thiophene unit.

    Polythiophenes and devices thereof
    10.
    发明公开
    Polythiophenes and devices thereof 有权
    聚噻吩和维他命

    公开(公告)号：EP1679330A1

    公开(公告)日：2006-07-12

    申请号：EP06005902.9

    申请日：2003-01-10

    申请人： Xerox Corporation

    发明人： Ong, Beng S. ,  Liu, Ping ,  Wu, Yiliang ,  Ql, Yu

    IPC分类号： C08G61/12

    CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

    摘要： A polythiophene

    wherein A is an alkyl side chain having from 5 to 25 carbon atoms; B is hydrogen or an alkyl side chain having from 1 to 4 carbon atoms; D is a divalent linkage; a and c represent the number of A-substituted thienylenes wherein a is from 1 to 8; b is the number of B-substituted thienylene segments wherein b is from 1 to 7 and c is from 0 to 8; d is 1; and n represents the degree of polymerization or the number of the monomer segments.

    摘要翻译： 聚噻吩，其中A是具有5至25个碳原子的烷基侧链; B是氢或具有1至4个碳原子的烷基侧链; D是二价键; a和c表示其中a为1至8的A-取代的噻吩基的数目; b是B取代的亚噻吩基的数目，其中b为1至7，c为0至8; d为1; n表示聚合度或单体链段数。