公开(公告)号：EP2485252B1

公开(公告)日：2015-08-26

申请号：EP12153363.2

申请日：2012-01-31

申请人： Xycarb Ceramics B.V.

发明人： Van Munster, Marcus Gerardus ,  Van Velzen, Wilhelmus Johannes Mattheus ,  Van Der Heijden, Johannes Leonardus Lamberdina

IPC分类号： H01L21/66

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12 ,  H01L22/14

公开(公告)号：EP2485252A1

公开(公告)日：2012-08-08

申请号：EP12153363.2

申请日：2012-01-31

申请人： Xycarb Ceramics B.V.

发明人： Van Munster, Marcus Gerardus ,  Van Velzen, Wilhelmus Johannes Mattheus ,  Van Der Heijden, Johannes Leonardus Lamberdina

IPC分类号： H01L21/66

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12 ,  H01L22/14

摘要： The present invention relates to a method of processing substrate holder material for a substrate holder on which on a first side of said substrate holder a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate using induction heating, the method comprising the steps of determining a first electrical resistivity at at least one measuring position on said substrate holder material, comparing said first electrical resistivity with a second reference electrical resistivity and adapting said substrate holder material in correspondence with said comparison.
The present invention also relates to a substrate holder processes by such a method.

摘要翻译： 本发明涉及一种处理衬底保持器的衬底保持器材料的方法，其中在所述衬底保持器的第一侧上放置半导体衬底以用于使用感应加热在半导体衬底上分层沉积各种半导体材料，该方法 包括以下步骤：确定所述衬底保持器材料上的至少一个测量位置处的第一电阻率，将所述第一电阻率与第二参考电阻率进行比较，并根据所述比较调整所述衬底保持器材料。 本发明还涉及通过这种方法进行的衬底保持器工艺。

公开(公告)号：EP1612851B1

公开(公告)日：2010-03-03

申请号：EP04076897.0

申请日：2004-06-30

申请人： Xycarb Ceramics B.V.

发明人： Van Munster, Marcus Gerardus

IPC分类号： H01L21/04 ,  H01L29/24

CPC分类号： C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  H01L21/673 ,  C04B35/565

公开(公告)号：EP1612851A1

公开(公告)日：2006-01-04

申请号：EP04076897.0

申请日：2004-06-30

申请人： Xycarb Ceramics B.V.

发明人： Van Munster, Marcus Gerardus

IPC分类号： H01L21/04 ,  H01L29/24

CPC分类号： C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  H01L21/673 ,  C04B35/565

摘要： The invention relates to a method for the treatment of a surface of a metal-carbide substrate, said metal-carbide substrate being used in semiconductor manufacturing processes.
The invention also relates to a metal-carbide substrate for use in semiconductor manufacturing processes treated with to the method according to the invention.
According to the invention said method comprising the steps of selective etching the surface of said metal-carbide substrate using a reactive gas mixture thereby creating a carbon surface layer on said metal-carbide substrate, and removing said carbon surface layer being created on said metal-carbide substrate.
Thus with the method steps according to the invention metal-carbide substrates can be obtained with a surface structure that complies with the highest standards as regard to dimensions and purity as required in semiconductor manufacturing processes. Especially metal-carbide substrates treated according to the steps of the invention are highly suitable for use as wafer boats for handling and containing semiconductor wafers on which subsequent treatment process steps of the semiconductor manufacturing processes (such as semiconductor layer deposition or temperature annealing) are performed under accurate, well controlled working conditions (temperature, pressure and vacuum).

摘要翻译： 本发明涉及一种用于金属的碳化物基体的表面的处理方法，所述半导体制造工艺中所使用的金属 - 碳化物基材。 因此，本发明涉及用于在与该方法雅丁本发明处理半导体制造工艺中使用的金属 - 碳化物基材。 。根据本发明所述方法包括选择性蚀刻步骤使用的反应性气体混合物，从而产生在所述金属碳化物基材碳的表面层，以及去除所述碳表面层，所述金属碳化物基底的表面被在所述金属创建 硬质合金基体。 因此，与gemäß发明金属碳化物基体的方法步骤可以与表面结构来获得确实符合最高标准为关于尺寸和纯度如在半导体制造过程中必需的。 特别是处理过的雅丁到本发明的步骤的金属碳化物基体是高度适合用作晶片舟皿，用于处理和含在其上的半导体制造工艺的随后的处理过程中的步骤的半导体晶片（：诸如半导体层沉积或高温退火）中进行 准确，控制良好的工作条件（温度，压力和真空）下。