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1.发明公开Hard film of Ti-Si-N composite material and method for production thereof 失效Harte Beschichtung aus zusammengesetztem Ti-Si-N-Material und Verfahren zur Herstellung derselben。
公开(公告)号：EP0588350A3
公开(公告)日：1995-03-01
申请号：EP93114948.8
申请日：1993-09-16
发明人： Yamagata, Hiroshi , Yamaguchi, Tadashi , Takeda, Hideki , Nishiyama, Nobuyuki,c/o Teikoku Piston Ring,Ltd. , Nozaki, Katsutoshi , Inoue, Akihisa , Masumoto, Tsuyoshi
CPC分类号： C23C14/0021 , C23C14/0641 , C23C14/0688 , Y10T428/12486 , Y10T428/12576
摘要： Deposition of a hard film of Ti-Si-N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti a Si b (wherein "a" and "b" stand for atomic percentages respectively falling in the ranges of 75 at% ≦ a ≦ 85 at% and 15 at% ≦ b ≦ 25 at%, providing a + b = 100 at% ). Deposition is effected by a sputtering process or ion plating process in an atmosphere of an inert gas containing a nitrogen-containing reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of nitrogen is kept constant or varied continuously or stepwise. By this method, there can be obtained a film having fine TiN crystalline particles uniformly dispersed in the matrix phase of Ti-Si amorphous metal or a film of functionally gradient structure in which the ratio of fine TiN crystalline particles dispersed in the matrix phase increases continuously or stepwise in the direction of thickness of the film.
摘要翻译： 通过使用具有TiaSib组成的蒸发源（其中“a”和“b”表示分别落在75的范围内的原子百分比来进行Ti-Si-N复合材料的硬膜在基板上的沉积 at％
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2.发明公开Hard film of Ti-Si-N composite material and method for production thereof 失效制成的复合钛 - 硅-N材料和制备方法的硬涂层。
公开(公告)号：EP0588350A2
公开(公告)日：1994-03-23
申请号：EP93114948.8
申请日：1993-09-16
发明人： Yamagata, Hiroshi , Yamaguchi, Tadashi , Takeda, Hideki , Nishiyama, Nobuyuki,c/o Teikoku Piston Ring,Ltd. , Nozaki, Katsutoshi , Inoue, Akihisa , Masumoto, Tsuyoshi
CPC分类号： C23C14/0021 , C23C14/0641 , C23C14/0688 , Y10T428/12486 , Y10T428/12576
摘要： Deposition of a hard film of Ti-Si-N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti a Si b (wherein "a" and "b" stand for atomic percentages respectively falling in the ranges of 75 at% ≦ a ≦ 85 at% and 15 at% ≦ b ≦ 25 at%, providing a + b = 100 at% ). Deposition is effected by a sputtering process or ion plating process in an atmosphere of an inert gas containing a nitrogen-containing reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of nitrogen is kept constant or varied continuously or stepwise. By this method, there can be obtained a film having fine TiN crystalline particles uniformly dispersed in the matrix phase of Ti-Si amorphous metal or a film of functionally gradient structure in which the ratio of fine TiN crystalline particles dispersed in the matrix phase increases continuously or stepwise in the direction of thickness of the film.
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3.发明授权Hard film of Ti-Si-N composite material and method for production thereof 失效钛 - 硅-N的复合材料的硬质覆膜和制造相同的方法
公开(公告)号：EP0588350B1
公开(公告)日：1997-01-29
申请号：EP93114948.8
申请日：1993-09-16
发明人： Yamagata, Hiroshi , Yamaguchi, Tadashi , Takeda, Hideki , Nishiyama, Nobuyuki,c/o Teikoku Piston Ring,Ltd. , Nozaki, Katsutoshi , Inoue, Akihisa , Masumoto, Tsuyoshi
CPC分类号： C23C14/0021 , C23C14/0641 , C23C14/0688 , Y10T428/12486 , Y10T428/12576
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