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    THREE-DIMENSIONAL MEMORY AND MANUFACTURING METHOD THEREFOR, AND STORAGE SYSTEM
    3.
    发明公开
    THREE-DIMENSIONAL MEMORY AND MANUFACTURING METHOD THEREFOR, AND STORAGE SYSTEM 审中-公开

    公开(公告)号：EP4440277A1

    公开(公告)日：2024-10-02

    申请号：EP21968477.6

    申请日：2021-12-21

    申请人： Yangtze Memory Technologies Co., Ltd.

    发明人： LIU, Xiaoxin ,  XUE, Lei

    IPC分类号： H10B43/40

    CPC分类号： H10B43/27 ,  H10B43/35

    摘要： The application provides a three-dimensional memory and the method for manufacturing the same, and a memory system. The memory comprises: a bottom select gate structure; a stack structure disposed on the bottom select gate structure, the stack structure including a channel layer extending in stack structure in the first direction of the thickness of the stack structure, the channel layer having a first conductive type impurity; a top select gate structure disposed on the stack structure, wherein at least one of the bottom select gate structure and the top select gate structure comprises a semiconductor structure extending in the first direction and connected with the channel layer and having a second conductive type impurity opposite to the first conductive type impurity. The memory provided in the present application can form a PN junction barrier capacitance in a conductive circuit connecting a channel layer by providing a semiconductor structure having an impurity of an opposite conductive type to the channel layer in a select gate structure. Therefore, the width of the space charge region in the capacitor above described can be modulated according to the requirements of the erasing, programming and read operation, and the turn-on speed of the channel layer can be controlled to optimize the turn-on/turn-off performance of the three-dimensional memory.