公开(公告)号：EP3734652A1

公开(公告)日：2020-11-04

申请号：EP19172269.3

申请日：2019-05-02

申请人： ams AG ,  Commissariat à l'énergie atomique et aux énergies alternatives

发明人： HOFRICHTER, Jens, Dr. ,  KASCHOWITZ, Manuel ,  POELZL, Bernhard ,  ROHRACHER, Karl, Dipl.-Ing. ,  JOUVE, Amandine ,  BALAN, Viorel ,  CROCHEMORE, Romain ,  FOURNEL, Frank ,  MAITREJEAN, Sylvain

IPC分类号： H01L23/00 ,  B81C1/00 ,  H01L27/146 ,  H01L21/321 ,  H01L21/768

摘要： A semiconductor device comprises a substrate body (2) with a surface (3), a conductor (5) comprising a conductor material (5a) covering at least part of the surface (3), and a dielectric (4) that is arranged on a part of the surface (3) that is not covered by the conductor (5). Therein, the conductor (5) is in contact with the substrate body (2), the conductor (5) and the dielectric (4) form a layer (8), and a bonding surface (6) of the layer (8) has surface topographies of less than 10 nm, with the bonding surface (6) facing away from the substrate body (2). Moreover, the semiconductor device (1) is free of a diffusion barrier.