SINGLE SOURCE SPUTTERING OF THIOALUMINATE PHOSPHOR FILMS
    1.
    发明授权
    SINGLE SOURCE SPUTTERING OF THIOALUMINATE PHOSPHOR FILMS 有权
    阴极溅射硫代铝酸盐荧光膜USING A SINGLE具体目标

    公开(公告)号:EP1392881B1

    公开(公告)日:2008-04-02

    申请号:EP02729684.7

    申请日:2002-05-07

    IPC分类号: C23C14/06 C23C14/00 C09K11/84

    摘要: A method of deposition of a phosphor in a single-source sputtering process, in which the phosphor is selected from the group consisting of ternary, quaternary or higher thioaluminate, thiogallate and thioindate phosphors, and composites thereof, synthesized with cations selected from Groups IIA and IIB of the Periodic Table of Elements. The phosphor is of a pre-determined composition of elements. The method comprising sputtering in a hydrogen sulphide atmosphere from a single source composition so as to deposit a composition on a substrate. The composition of the targets of the single source has a relative increase in concentration of elements of the phosphor that have a lower atomic weight compared to other elements in said phosphor. The relative increase is controlled such that deposition of the pre-determined composition is effected on the substrate. Preferred phosphors are barium thioaluminate (BaAl2S4:Eu), and barium magnesium thioaluminates.