公开(公告)号：EP0842541B1

公开(公告)日：2002-02-13

申请号：EP95926356.7

申请日：1995-07-31

申请人： iFire Technology Inc. ,  Sunnybrook Hospital

发明人： WAECHTER, David ,  ZHAO, Wei ,  ROWLANDS, John ,  HUANG, Zhong, Shou

IPC分类号： H01L27/146

CPC分类号： H01L27/14643

摘要： A flat panel detector (20) for radiation imaging includes an array of transistor switches (38) each of which is associated with a pixel electrode (36). A radiation transducer (CSE) including a top electrode (72) and a radiation conversion layer (70) is disposed over the array. Means are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting means is constituted by islands (64) formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

公开(公告)号：EP0842541A1

公开(公告)日：1998-05-20

申请号：EP95926356.0

申请日：1995-07-31

申请人： LITTON SYSTEMS CANADA LIMITED ,  Sunnybrook Hospital

发明人： WAECHTER, David ,  ZHAO, Wei ,  ROWLANDS, John ,  HUANG, Zhong, Shou

IPC分类号： H01L27

CPC分类号： H01L27/14643

摘要： A flat panel detector (20) for radiation imaging includes an array of transistor switches (38) each of which is associated with a pixel electrode (36). A radiation transducer (CSE) including a top electrode (72) and a radiation conversion layer (70) is disposed over the array. Means are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting means is constituted by islands (64) formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

公开(公告)号：EP0819351B1

公开(公告)日：2001-08-01

申请号：EP95915088.9

申请日：1995-04-07

申请人： iFire Technology Inc.

发明人： WAECHTER, David ,  HUANG, Zhong, Shou

IPC分类号： H04N3/15 ,  H04N3/12

CPC分类号： H04N5/3741

摘要： Improved circuitry for active matix image arrays which, in one application reduces the number of source or gate lines for a given number of pixels, and in another application extends the dynamic range of the imaging array without reducing the number of source or gate lines. Each circuit includes multiple electrodes per pixel and multiple thin film transistors for switching charge from the pixel electrodes to the data line.