FLAT PANEL DETECTOR FOR RADIATION IMAGING WITH REDUCED TRAPPED CHARGES
    1.
    发明授权
    FLAT PANEL DETECTOR FOR RADIATION IMAGING WITH REDUCED TRAPPED CHARGES 失效
    平整,使用储存的负荷降低辐射探测器例证

    公开(公告)号:EP0842541B1

    公开(公告)日:2002-02-13

    申请号:EP95926356.7

    申请日:1995-07-31

    IPC分类号: H01L27/146

    CPC分类号: H01L27/14643

    摘要: A flat panel detector (20) for radiation imaging includes an array of transistor switches (38) each of which is associated with a pixel electrode (36). A radiation transducer (CSE) including a top electrode (72) and a radiation conversion layer (70) is disposed over the array. Means are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting means is constituted by islands (64) formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

    FLAT PANEL DETECTOR FOR RADIATION IMAGING WITH REDUCED TRAPPED CHARGES
    2.
    发明公开
    FLAT PANEL DETECTOR FOR RADIATION IMAGING WITH REDUCED TRAPPED CHARGES 失效
    平整,使用储存的负荷降低辐射探测器例证

    公开(公告)号:EP0842541A1

    公开(公告)日:1998-05-20

    申请号:EP95926356.0

    申请日:1995-07-31

    IPC分类号: H01L27

    CPC分类号: H01L27/14643

    摘要: A flat panel detector (20) for radiation imaging includes an array of transistor switches (38) each of which is associated with a pixel electrode (36). A radiation transducer (CSE) including a top electrode (72) and a radiation conversion layer (70) is disposed over the array. Means are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting means is constituted by islands (64) formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

    ACTIVE MATRIX X-RAY IMAGING ARRAY
    4.
    发明公开
    ACTIVE MATRIX X-RAY IMAGING ARRAY 失效
    有源矩阵X光片

    公开(公告)号:EP0823132A1

    公开(公告)日:1998-02-11

    申请号:EP95916537.0

    申请日:1995-04-28

    IPC分类号: H01L27 H01L31 H04N5

    CPC分类号: H01L27/14665

    摘要: A digital detector for radiography and fluoroscopy. The detector comprises a large area, flat panel which easily fits into the conventional X-ray room bucky tray. The detector utilizes a layer of photoconductor (i.e. a-Se in the preferred embodiment) to detect X-rays and convert the X-ray energy to charge, and an active matrix TFT array in the form of a very large area integrated circuit, for readout of the charge. A dual gate structure is used for the TFT array wherein the top gate is formed as an extension of the pixel electrode, so as to provide high voltage protection of the TFT. An integrated pixel storage capacitor is provided for enhanced absorption of X-ray energy with low pixel voltage, low leakage current and a large charge leakage time constant. In the preferred embodiment, the integrated pixel storage capacitor is created by overlapping the pixel electrode with an adjacent gate line or a separate groundline of the active matrix readout array. Image charge collection efficiency is enhanced in the imager of the present invention by manipulating the electric field distribution in the photoconductor layer so that image charges land on the pixel electrodes, and not on the TFT readout devices. Also, a photo-timer is integrated into the imaging detector for measuring X-ray exposure.