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1.发明授权Redistributing silalkylenes in an alkyl-rich silalkylene-containing residue 有权在一个Alkylreiche含有硅亚烷基 - 残基silalkylenes的再分配
公开(公告)号：EP1016667B1
公开(公告)日：2004-04-07
申请号：EP99123551.6
申请日：1999-11-26
发明人： Wood, Larry Herbert
IPC分类号： C07F7/12
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2.发明授权Procédé de scission des sous-produits de la synthèse directe des alkylchlorosilanes 失效一种用于裂解的副产物从烷基氯硅烷的直接合成工艺
公开(公告)号：EP0737687B1
公开(公告)日：2001-11-21
申请号：EP96420113.1
申请日：1996-04-04
申请人： RHODIA CHIMIE
发明人： Gilbert, Laurent , Laroze, Gilles
IPC分类号： C07F7/12
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3.发明公开Redistributing silalkylenes in an alkyl-rich silalkylene-containing residue 有权在一个Alkylreiche含有硅亚烷基 - 残基silalkylenes的再分配
公开(公告)号：EP1016667A2
公开(公告)日：2000-07-05
申请号：EP99123551.6
申请日：1999-11-26
发明人： Wood, Larry Herbert
IPC分类号： C07F7/12
摘要： A process for redistributing an alkyl-rich silalkylene-containing residue. The process comprises contacting an alkyl-rich silalkylene-containing residue with a halosilane selected from the group consisting of alkyltrihalosilanes and tetrahalosilanes in the presence of an effective amount of a redistribution catalyst at a temperature of 150°C. to 500°C. thereby forming a redistribution product comprising dialkyldihalosilane. At least a portion of the catalyst in the present process may be formed in situ during conduct of the direct process and isolation of the resulting monosilanes.
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公开(公告)号：EP0878477A1
公开(公告)日：1998-11-18
申请号：EP98107652.4
申请日：1998-04-27
发明人： Tzou, Ming-Shin
IPC分类号： C07F7/20 , C01B33/107
CPC分类号： C07F7/128
摘要： A method is disclosed herein for the purification of chlorosilanes used for the manufacture of electronic-grade silicon and more particularly it provides a method for removing trace contaminants of phosphorus. The method comprises contacting a mixture comprising a chlorosilane and a phosphorus contaminant with an absorbent comprising a copper or compound of copper supported on silica.
摘要翻译： 一种用于还原氯硅烷中的磷污染物的方法包括将主要部分式为RaHbSiCl4-ab（I）的氯硅烷和少量磷或磷化合物的混合物与负载在二氧化硅上的铜或铜化合物组成的吸附剂 在100-600℃; R =（未）取代的1-6C烷基，a = 0-3，b = 0-3。
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5.发明公开Process for converting high-boiling residue from direct process to monosilanes 失效在单硅烷直接合成的高沸点残余物的实施
公开(公告)号：EP0812850A3
公开(公告)日：1998-10-28
申请号：EP97303501
申请日：1997-05-22
申请人： DOW CORNING
IPC分类号： C01B33/107 , C07F7/12 , C07F7/16
摘要： Described herein is a process for the production of monosilanes from the high-boiling residue resulting from the reaction of organochlorides with silicon metalloid in a process typically referred to as the "direct process." The process comprises contacting a mixture comprising the high-boiling residue, an organotrichlorosilane and hydrogen chloride with a catalytic amount of catalyst composition effective in promoting the formation of monosilanes from said residue. A preferred catalyst composition comprises aluminum trichloride, at least a portion of which is formed
in situ during conduct of the direct process and isolation of the high-boiling residue. Typically, the monosilane product of the present process comprises almost exclusively methyltrichlorosilane and tetrachlorosilane.-
公开(公告)号：EP0743315A3
公开(公告)日：1997-10-22
申请号：EP96303110.9
申请日：1996-05-02
发明人： Marko, Ollie William
IPC分类号： C07F7/12
摘要： A redistribution process for enriching a low-boiling methylsilane mixture in a methylchlorosilane selected from dimethylhydrochlorosilane and trimethylchlorosilane. The process comprises contacting a low-boiling methylsilane mixture, resulting from the contact of methyl chloride with silicon, with alumina under non-equilibrium conditions at a temperature greater than 150°C. we have surprisingly found that the concentrations of dimethylhydrochlorosilane and trimethylchlorosilane reach maximum levels under non-equilibrium conditions occurring at a temperature greater than 150°C. The process is also useful for facilitating the removal of olefin and chlorocarbon organic contaminants from the low-boiling methylsilane mixture.
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7.发明公开Aluminum trichloride catalyzed hydrogenation of high-boiling residue from direct process 失效Durch Aluminumtrichlorid katalysierte Hydrierung von hochsiedendenRückständender Direktsynthese
公开(公告)号：EP0709389A1
公开(公告)日：1996-05-01
申请号：EP95307516.5
申请日：1995-10-23
发明人： Ferguson, Stephen Paul , Jarvis, Robert Frank Jr. , Naasz, Bryan Michael , Oltmanns, Kimberley K. , Warrick, Gordon L. , Whiteley, Darrel Leslie
CPC分类号： C07F7/0896 , C07F7/128
摘要： A process is described for the production of monosilanes from the high-boiling residue resulting from the reaction of organohalides with silicon metalloid in a process typically referred to as the "direct process." This process comprises forming a mixture comprising an organotrihalosilane and the high-boiling residue in the presence of both hydrogen gas and a catalytic amount of aluminum trichloride. The process results in the consumption of the organotrihalosilane rather than an increase which typically occurs in processes for hydrogenation of the high-boiling residue. At least a portion of the catalytic amount of aluminum trichloride may be formed in situ during conduct of the direct process and isolation of the high-boiling residue.
摘要翻译： 要求保护高沸点残余物转化为单硅烷的方法。 当有机卤化物与硅准金属反应时，残留物在“直接法”期间形成。 转化过程包括将残余物与式RSiX 3（I）的有机三卤硅烷混合并接触混合物。 在三氯化铝催化剂存在下，氢气为50-10,000psig。 温度 的过程是150-500℃。 R = 1-6C烷基，芳基，1-6C烷氧基，三甲基甲硅烷基或三氟丙基; 和X =卤素。
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8.发明公开Verfahren zur Aufarbeitung von kupferhaltigen Rückständen aus der Organochlorsilansynthese 失效有机化学物质公司（Rückständenaus der Organoclorsilansynthese）的Verfahren zur Aufarbeitung von kupferhaltigen
公开(公告)号：EP0682032A2
公开(公告)日：1995-11-15
申请号：EP95103282.0
申请日：1995-03-08
发明人： Ruff, Klaus
IPC分类号： C07F7/16
摘要： Die Erfindung betrifft ein Verfahren zur Aufarbeitung von kupferhaltigen Rückständen aus der Organochlorsilansynthese durch Hydrolysieren der Rückstände und Behandeln derselben mit Salzsäure in Gegenwart von Sauerstoff sowie Abtrennen der kupferhaltigen Salzsäure von den behandelten Rückständen, wobei die kupferhaltige Salzsäure entkupfert und anschließend zum Hydrolysieren von kupferhaltigen Rückständen und zum Behandeln derselben in Gegenwart von Luft wieder eingesetzt wird.
摘要翻译： 一种通过在氧气存在下用盐酸水解和处理来处理有机氯硅烷合成残余物的方法，然后是sepn。 的铜。 酸残留物。 铜铜 酸被脱水并立即再次使用。
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9.发明公开Conversion of direct process high-boiling component to chlorosilane monomers in the presence of chlorine 失效在氯的存在Chlorsilanmonomere的直接合成的高沸点残余物的实现。
公开(公告)号：EP0634419A1
公开(公告)日：1995-01-18
申请号：EP94304887.6
申请日：1994-07-04
发明人： Chadwick, Kirk Michael , Johnson, Richard Gordon , Dhaul, Ajay Kumar , Steinmeyer, Robert David , Halm, Roland Lee
摘要： The present invention is a process for converting a high-boiling component, resulting from the reaction of an organochloride with silicon, into more commercially desirable monosilanes. The process comprises contacting the high-boiling component with chlorine at a temperature within a range of 250°C. to 1000°C. Improved process yield of monosilanes is obtained by the use of a catalyst selected from alumina, silica, activated carbon, AlCl₃ and AlCl₃ supported on a support selected from alumina, silica and carbon.
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10.发明公开Verfahren zur Gewinnung von Methylchlorsilanen aus hochsiedenden Rückständen der Methylchlorsilansynthese 失效一种用于回收来自甲基氯硅烷的高沸点残基的甲基氯硅烷处理。
公开(公告)号：EP0574912A1
公开(公告)日：1993-12-22
申请号：EP93109691.1
申请日：1993-06-17
申请人： Wacker-Chemie GmbH
IPC分类号： C07F7/12
摘要： Das Verfahren zur Gewinnung von Methylchlorsilanen aus hochsiedenden Rückständen der Methylchlorsilansynthese, wobei in den Rückständen vorhandene spaltbare Methylchlordisilane, welche mindestens zwei Chloratome an einem Siliciumatom aufweisen, mit Chlorwasserstoff in Gegenwart eines im Reaktionsgemisch verbleibenden Katalysators gespalten werden, ist dadurch gekennzeichnet, daß die Spaltung der Methylchlordisilane in Gegenwart der leichter als die spaltbaren Methylchlordisilane flüchtigen Nebenprodukte der hochsiedenden Rückstände der Methylchlorsilansynthese, die einen Siedepunkt von mindestens 70°C bei Normalbedingungen aufweisen, abläuft, wobei die leichterflüchtigen Nebenprodukte kontinuierlich zusammen mit den Methylchlorsilanen und den nicht spaltbaren Methylchlordisilanen aus dem Reaktionsgemisch entfernt werden.
摘要翻译： 从甲基氯硅烷合成从高沸点残余物的甲基氯硅烷的回收率的方法，其中存在于所述残基和可裂解methylchlorodisilanes包含在硅原子上的至少两个氯原子与氯化氢在催化剂的存在下保持在切割 该反应混合物中，在DASS副产品的存在下进行methylchlorodisilanes，这是更容易地比裂解methylchloridisilanes挥发性，从甲基氯硅烷合成的高沸点残余物，其具有的在沸点的裂解 在正常条件下至少70℃，更容易挥发性副产物被从与甲基氯硅烷和不可切割methylchlorodisilanes一起将反应混合物连续取出。
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