公开(公告)号：EP2227823A2

公开(公告)日：2010-09-15

申请号：EP08870141.2

申请日：2008-12-31

申请人： Sandisk 3D LLC

发明人： SCHEUERLEIN, Roy, E.

IPC分类号： H01L21/8239 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L21/48 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76817 ,  H01L23/5384 ,  H01L27/10 ,  H01L27/101 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a damascene process An imprint lithography mask for manufacturing a memory layer in a three dimensional memory is described. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and at least one depth corresponds to holes for forming vias. Numerous other aspects are disclosed.

公开(公告)号：EP2227823A4

公开(公告)日：2012-04-18

申请号：EP08870141

申请日：2008-12-31

申请人： SANDISK 3D LLC

发明人： SCHEUERLEIN ROY E

IPC分类号： H01L21/8239 ,  G03F7/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/768 ,  H01L27/10

CPC分类号： H01L21/48 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76817 ,  H01L23/5384 ,  H01L27/10 ,  H01L27/101 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1702359A1

公开(公告)日：2006-09-20

申请号：EP04744316.3

申请日：2004-08-23

申请人： International Business Machines Corporation

发明人： BIETSCH, Alexander ,  MICHEL, Bruno

IPC分类号： H01L21/768 ,  H01L21/027 ,  G03F7/00

CPC分类号： H01L21/76817 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76807 ,  H01L2221/1021 ,  Y10S438/946

摘要： Described is a method for forming a multilevel structure on a surface. The method comprises: depositing a curable liquid layer (200) on the surface; pressing a stamp (120) having a multilevel pattern therein into the liquid layer to produce in the liquid layer a multilevel structure defined by the pattern; and, curing the liquid layer to produce a solid layer having the multilevel structure therein. Mechanical alignment may be employed to enhance optical alignment of the stamp relative to the substrate via a plurality of spaced protrusions on the substrate on which the structure is to be formed and complementary recesses in the patterning of the stamp.

摘要翻译： 一种通过在表面上沉积可固化液体层而在表面上形成多层结构的方法; 将其中具有多层图案的印模压入液体层中，以在液体层中产生由图案限定的多层结构; 并固化液体层以产生其中具有多层结构的固体层。 可以采用机械对准来增强印模相对于基板的光学对准，通过其上要形成结构的基板上的间隔开的突起和印模的图案化中的互补凹槽。

公开(公告)号：EP1702359B1

公开(公告)日：2009-12-09

申请号：EP04744316.3

申请日：2004-08-23

申请人： International Business Machines Corporation

发明人： BIETSCH, Alexander ,  MICHEL, Bruno

IPC分类号： H01L21/768 ,  H01L21/027 ,  G03F7/00

CPC分类号： H01L21/76817 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76807 ,  H01L2221/1021 ,  Y10S438/946

摘要： Described is a method for forming a multilevel structure on a surface. The method comprises: depositing a curable liquid layer (200) on the surface; pressing a stamp (120) having a multilevel pattern therein into the liquid layer to produce in the liquid layer a multilevel structure defined by the pattern; and, curing the liquid layer to produce a solid layer having the multilevel structure therein. Mechanical alignment may be employed to enhance optical alignment of the stamp relative to the substrate via a plurality of spaced protrusions on the substrate on which the structure is to be formed and complementary recesses in the patterning of the stamp.

摘要翻译： 描述了用于在表面上形成多级结构的方法。 该方法包括：在表面上沉积可固化液体层（200） 将其中具有多级图案的印模（120）压入所述液体层中以在所述液体层中产生由所述图案限定的多级结构; 并且固化液体层以产生其中具有多级结构的固体层。 机械对准可以用于通过在其上将形成结构的基板上的多个间隔的突起和在图案化印模中的互补凹槽来增强印模相对于基板的光学对准。

公开(公告)号：EP0905768A1

公开(公告)日：1999-03-31

申请号：EP98115780.3

申请日：1998-08-21

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Tobben, Dirk

IPC分类号： H01L21/768 ,  H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/76813 ,  H01L2221/1021

摘要： A process for the manufacture of silicon integrated circuits uses a dual damascene metallization process with an organic intermetal dielectric (14). A pattern to be etched is first etched in a hard mask (16) without exposing the underlying intermetal dielectric (14) and then transferred into the intermetal dielectric (14) on an enlarged scale.

摘要翻译： 一种用于硅集成电路的制造工艺使用的有机金属化合电介质（14）的双镶嵌金属化过程。 待蚀刻的图案首先被蚀刻成硬掩模（16），而不暴露下面的金属间介质（14），然后在放大的比例上转移到金属间介质（14）。