-
1.发明公开STRUCTURE AND METHOD FOR BIASING PHASE CHANGE MEMORY ARRAY FOR RELIABLE WRITING 审中-公开结构与方法的相变存储器矩阵的对可靠写作BIAS
公开(公告)号：EP1846954A4
公开(公告)日：2014-02-26
申请号：EP06717919
申请日：2006-01-11
申请人： SANDISK 3D LLC
发明人： SCHEUERLEIN ROY E
IPC分类号： G11C13/00
CPC分类号： G11C11/21 , G11C13/0004 , G11C13/0023 , G11C13/0038 , G11C13/0069 , G11C2013/009 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L27/2481
-
2.发明公开MULTIPLE ANTIFUSE MEMORY CELLS AND METHODS TO FORM, PROGRAM, AND SENSE THE SAME 审中-公开多重防熔化连接存储单元和方法的教育，写入及读取
公开(公告)号：EP2203919A4
公开(公告)日：2010-08-11
申请号：EP08833455
申请日：2008-09-26
申请人： SANDISK 3D LLC
IPC分类号： G11C16/10
CPC分类号： G11C17/16 , G11C11/5685 , G11C11/5692 , G11C13/0007 , G11C17/06 , G11C17/146 , G11C17/165 , G11C2213/32 , G11C2213/72 , H01L27/101 , H01L27/1021
-
公开(公告)号：EP2109936A4
公开(公告)日：2011-09-28
申请号：EP07865875
申请日：2007-12-19
申请人： SANDISK 3D LLC
发明人： AL-SHAMMA ALI , SCHEUERLEIN ROY E
IPC分类号： H03L7/093
CPC分类号： H02M3/073 , G11C5/145 , G11C13/0038 , G11C2213/77 , H02M2003/071
-
4.发明公开METHOD AND APPARATUS FOR READING A MULTI-LEVEL PASSIVE ELEMENT MEMORY CELL ARRAY 有权用于读取多个被动元件存储单元矩阵的方法和装置
公开(公告)号：EP2052390A4
公开(公告)日：2009-09-09
申请号：EP07799950
申请日：2007-07-31
申请人： SANDISK 3D LLC
发明人： SCHEUERLEIN ROY E , THORP TYLER J , FASOLI LUCA G
CPC分类号： G11C11/56 , G11C11/5642 , G11C13/004 , G11C13/0069 , G11C16/24 , G11C16/26 , G11C2013/0054 , G11C2013/009 , G11C2211/5634 , G11C2213/77
-
5.发明公开
公开(公告)号：EP1864291A4
公开(公告)日：2009-04-08
申请号：EP06769791
申请日：2006-03-31
申请人： SANDISK 3D LLC
发明人： FASOLI LUCA G , SCHEUERLEIN ROY E
CPC分类号： G11C29/808 , G11C29/76 , G11C29/804 , G11C29/816
摘要： An integrated circuit memory array includes alternating first and second types of memory blocks, each memory block including respective array lines shared with a respective array line in an adjacent memory block. The array lines of a defective block of one type are mapped into a spare block of the same type. The array lines of a first adjacent block which are shared with array lines of the defective block, and the array lines of a second adjacent block which are shared with array lines of the defective block, are mapped into a second spare block of the other type, thereby mapping the defective block and portions of both adjacent blocks into just two spare blocks.
-
6.发明公开METHOD AND APPARATUS FOR MEMORY ARRAY INCORPORATING TWO DATA BUSSES FOR MEMORY ARRAY BLOCK SELECTION 有权程序8ND设备，用于存储数据和两辆巴士于存储块选
-
7.发明公开TRANSISTOR LAYOUT CONFIGURATION FOR TIGHT-PITCHED MEMORY ARRAY LINES 审中-公开TRANSISTORS阵列配置用于密封有序存储器阵列线
公开(公告)号：EP1864094A4
公开(公告)日：2010-07-14
申请号：EP06740254
申请日：2006-03-31
申请人： SANDISK 3D LLC
IPC分类号： H01L21/8242 , G11C8/14 , G11C11/408 , H01L21/822 , H01L27/02 , H01L27/06 , H01L27/108
CPC分类号： G11C8/14 , G11C5/02 , G11C5/063 , G11C8/08 , H01L27/0207 , H01L27/0688 , H01L27/10894 , H01L27/10897
-
8.发明公开METHOD AND APPARATUS FOR PASSIVE ELEMENT MEMORY ARRAY INCORPORATING REVERSIBLE POLARITY WORD LINE AND BIT LINE DECODERS 有权方法和装置不可逆的和XA被动存储器阵列;极性WORD AND BITLEITUNGSKODIERER的
公开(公告)号：EP2062262A4
公开(公告)日：2009-09-02
申请号：EP07840617
申请日：2007-07-31
申请人： SANDISK 3D LLC
IPC分类号： G11C11/00
CPC分类号： G11C8/10 , G11C8/08 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C17/165
-
9.发明公开METHODS AND APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY 审中-公开方法和设备形成三维存储器阵列存储器线和路径BY DOPPELTAUSCHIERUNG和印刷LITHOGRAPHIE
公开(公告)号：EP2227823A4
公开(公告)日：2012-04-18
申请号：EP08870141
申请日：2008-12-31
申请人： SANDISK 3D LLC
发明人： SCHEUERLEIN ROY E
IPC分类号： H01L21/8239 , G03F7/00 , H01L21/02 , H01L21/28 , H01L21/311 , H01L21/768 , H01L27/10
CPC分类号： H01L21/48 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76807 , H01L21/76817 , H01L23/5384 , H01L27/10 , H01L27/101 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
-
10.发明公开STORAGE SUB-SYSTEM FOR A COMPUTER COMPRISING WRITE-ONCE MEMORY DEVICES AND WRITE-MANY MEMORY DEVICES AND RELATED METHOD 审中-公开内存子系统对于计算机。一旦存储设备和多次写入存储设备及相应方法
公开(公告)号：EP2227746A4
公开(公告)日：2011-11-02
申请号：EP08869429
申请日：2008-12-31
申请人： SANDISK 3D LLC
CPC分类号： G06F12/0638 , G06F11/1415 , G06F12/1425 , G06F2212/2142
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.01 秒)
