摘要:
An integrated circuit for generating image data comprises a focal-plane array of unit cells, a controller, and a memory structure having a plurality of storage locations. Each unit cell may store charge based on detected photons. The controller may read a value based on the stored charge from at least some of the unit cells, and either add the read value to an existing value in the corresponding storage location when operating in frame-sum mode, or add the read value to an existing value in a shifted storage location when operating in time-delay integration (TDI) mode. This may allow faint objects as well as objects moving in the field-of-view of the focal-plane array to be observed. The integrated circuit may be fabricated from radiation-hardened CMOS technology and may be a layer of a sensor chip assembly.
摘要:
In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要:
A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.
摘要:
A CCD such as a frame transfer CCD has an extended dynamic range. The image built up in the image region 1 in each integration period is transferred to the store region 2 in each frame transfer period, for example, at a TV signal rate. The dynamic range is increased by dividing the integration period into two parts, and clipping the signal in the first part, but not in the second. The signal is clipped by pulsing the clock electrodes of the image region so as to combine the charges from adjacent wells together, overspill being drained into the anti-blooming structure, consequently reducing well capacity.
摘要:
A compact image pickup device with high sensitivity is provided, which is suitable for a spatial information detecting apparatus. The image pickup device has a plurality of image pickup units (Ul) arranged on a semiconductor substrate. Each of the image pickup units (Ul) has a light receiving array of photoelectric conversion elements (Px) for generating electric charges corresponding to a received-light amount, a transfer array (Yl) of charge transfer elements (Py), an accumulation array (Zl) of charge accumulation elements each having a greater charge storage capacity than a saturation charge amount of the photoelectric conversion element, and a charge-amount adjusting portion (D4) configured to determine an amount of undesired electric charges to be separated from the electric charges generated by each of the photoelectric conversion elements. The transfer array and the light receiving array (Xl) are arranged in a line in a vertical direction (Dv). The accumulation array (Pz) is disposed adjacent to the transfer array (Py) in a horizontal direction (Dh).
摘要:
An image pickup apparatus includes a solid-state image pickup element formed on a single semiconductor chip, the solid-state image pickup element including photoelectric conversion units arranged two-dimensionally, a plurality of CCDs for transferring charges generated by the photoelectric conversion units arranged two-dimensionally, each of the plurality of CCDs being arranged correspondingly to each line of photoelectric conversion units, a plurality of charge detection circuits for detecting the charges from the plurality of CCDs and supplying corresponding signal levels, each of the plurality of charge detection circuits being arranged correspondingly to each CCD, a common output line to which signals from the plurality of charge detection circuits are sequentially output, a plurality of transfer transistors for transferring the signals from the plurality of charge detection circuits to the common output line, and a scanning circuit for controlling the plurality of transfer transistors to sequentially output the signals from the plurality of charge detection circuits to the common output line.
摘要:
An image device (21) which is formed by stacking a plurality of chips each having a plurality of converters (33) that are disposed in the vicinity of a first end (31a) to form on or a plurality of rows and convert incident rays into electric signals, and having a plurality of electric signal storage units (35) that extend from each converter (33) to a second end (31b) on the opposite side of the first end (31a), for storing electric signals. A first end (31a) of each chip (31) is staggered from another first end (31a) of an adjacent chip (31) so that a row of converters (33) of individual chips (31) are exposed stepwise.
摘要:
A photodetector is provided, which has the capability of preventing a reduction in dynamic range for a signal light even under a plenty of environmental light to stably obtain a received light output. This photodetector has an accumulation electrode and a holding electrode, which are formed on a photoelectric converting portion through an insulating layer, and a control unit for controlling timings of applying voltages to these electrodes and polarities of the voltages. One of electrons and holes generated in the photoelectric converting portion is accumulated in an accumulation region formed by applying the voltage to the accumulation electrode, and the other is accumulated in a holding region formed by applying the voltage to the holding electrode. Then, the electrons and holes accumulated in the accumulation region and the holding region are recombined, so that remaining electrons or holes not recombined are output.
摘要:
A CCD type solid-state image sensor (CCD) and an image pickup apparatus of this invention have an image pickup unit and a charge multiplier mounted, as separated from each other, on a packaging board, thereby reducing an influence of one of the image pickup unit and the charge multiplier on the other. Consequently, an improvement in yield is realized. With the image pickup unit and the charge multiplier mounted, as separated from each other, on the packaging board, the CCD type solid-state image sensor (CCD) and the image pickup apparatus are highly versatile also when a design change is made in one of the image pickup unit and the charge multiplier.
摘要:
Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time. The electric charges accumulated in the light-receiving elements are transferred to the vertical transfer registers, due to the voltage output from the first drive-voltage applying electrode or the second drive-voltage applying electrode, or the voltages output from both electrodes. Therefore, the light-receiving elements can have different sensitivities, and the photographing device can photograph dynamic scenes in a broad dynamic range.