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    IMAGING CELL ARRAY INTEGRATED CIRCUIT
    3.
    发明公开
    IMAGING CELL ARRAY INTEGRATED CIRCUIT 审中-公开
    在成像单元阵列集成电路

    公开(公告)号：EP3044811A1

    公开(公告)日：2016-07-20

    申请号：EP14843596.9

    申请日：2014-09-04

    申请人： Opel Solar, Inc. ,  The University of Connecticut

    发明人： TAYLOR, Geoff, W.

    IPC分类号： H01L27/14 ,  H01S5/30 ,  H01S5/34

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    Semiconductor radiation detector with a modified internal gate structure
    6.
    发明公开
    Semiconductor radiation detector with a modified internal gate structure 审中-公开
    Halbleiterstrahlungsdetektor mit modifizierter interner Gate-Struktur

    公开(公告)号：EP2950346A2

    公开(公告)日：2015-12-02

    申请号：EP14197959.1

    申请日：2005-08-22

    申请人： Aurola, Artto

    发明人： Aurola, Artto

    IPC分类号： H01L27/146 ,  H01L31/112 ,  H01L31/115 ,  H01L29/76 ,  H01L27/148

    CPC分类号： H01L27/14679 ,  H01L27/1464 ,  H01L27/14681 ,  H01L27/14812

    摘要： A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.

    摘要翻译： 半导体辐射检测器装置包括第一导电类型的导电背面层（102）和体层（103）。 与导电背面层（102）相对，存在第二导电类型的修改的内部栅极层（104），第一导电类型的阻挡层（105）和像素掺杂（110,112,506,510,512） 第二种导电类型。 像素掺杂适于耦合到像素电压，其被定义为与导电背面层（102）的电位的电位差，并且其在检测器材料内产生用于俘获信号电荷的电位最小值。

    SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE
    7.
    发明公开
    SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE 有权
    FESTKÖRPERBILDAUFNAHMEVORRICHTUNG的HALBLEITERELEMENT

    公开(公告)号：EP2881991A1

    公开(公告)日：2015-06-10

    申请号：EP13825343.0

    申请日：2013-08-01

    申请人： National University Corporation Shizuoka University

    发明人： KAWAHITO, Shoji

    IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

    CPC分类号： H01L29/76833 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14843 ,  H01L27/1485 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

    摘要： A semiconductor element encompasses a charge-transfer path defined in a semiconductor region (34.35), configured to transfer signal charges, (b) a pair of first field-control electrodes (42a, 42b) laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, and a pair of second field-control electrodes (43a, 43b) arranged separately from and adjacently to the first field-control electrodes (42a, 42b). By applying field-control voltages differing from each other, to the first and second field-control electrodes (43a, 43b), a depleted potential in the charge-transfer path is changed, and a movement of the signal charges transferring in the semiconductor region is controlled. Because electric field can be made constant over a long distance along the charge-transfer direction, a semiconductor element and a solid-state imaging device, in which problems caused by interface defects and the like are avoided, can be provided.

    摘要翻译： 半导体元件包括限定在半导体区域（34.35）中的电荷传输路径，被配置为传送信号电荷，（b）经由绝缘膜层叠在半导体区域上的一对第一场控制电极（42a，42b），从而 将电荷转移路径夹在中间，以及与第一场控制电极（42a，42b）分开并相邻配置的一对第二场控制电极（43a，43b）。 通过施加彼此不同的场控制电压到第一和第二场控制电极（43a，43b），电荷传输路径中的耗尽电位改变，并且在半导体区域中传输的信号电荷的移动 被控制。 由于电场沿着电荷传输方向可以在长距离上保持恒定，所以可以提供避免由界面缺陷等引起的问题的半导体元件和固体摄像器件。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH SEMICONDUCTOR DEVICE
    8.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH SEMICONDUCTOR DEVICE 有权
    半导体器件和制造这种半导体器件的方法

    公开(公告)号：EP2842164A1

    公开(公告)日：2015-03-04

    申请号：EP12716031.5

    申请日：2012-04-23

    申请人： Teledyne Dalsa B.V.

    发明人： PEEK, Hermanus Leonardus ,  MAES, Willem, Hendrik ,  KLAASSENS, Wilco

    IPC分类号： H01L27/146

    CPC分类号： H01L23/538 ,  H01L21/743 ,  H01L21/7682 ,  H01L21/76849 ,  H01L21/76892 ,  H01L23/53214 ,  H01L23/53257 ,  H01L23/535 ,  H01L23/5386 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14806 ,  H01L27/14812 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to a semiconductor device comprising: i) a substrate (1) comprising an insulating layer (2), wherein the electrically insulating layer (2) comprises a recess (99), and ii) a first conductive wire (20). The first conductive wire (20) comprises a first conductive sub-layer (22) provided within the recess (99), and comprises a second conductive sub-layer (24) provided on the first conductive sub-layer (22) forming a shunt for the first conductive sub-layer (22), wherein the first conductive sub-layer (22) comprises tungsten and the second conductive sub-layer (24) comprises aluminum, wherein the first conductive sub-layer (22) and the second conductive sub-layer (24) are substantially planar, and wherein the second conductive sub-layer (24) has substantially the same pattern as the first conductive sub-layer (22). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology. This advantage is particularly useful in high-speed and/or high resolution image sensors.

    摘要翻译： 本发明涉及一种半导体器件，包括：i）包括绝缘层（2）的衬底（1），其中电绝缘层（2）包括凹槽（99），以及ii）第一导线（20）。 第一导线（20）包括设置在凹部（99）内的第一导电子层（22），并且包括设置在第一导电子层（22）上的第二导电子层（24），形成分路 对于所述第一导电子层（22），其中所述第一导电子层（22）包含钨且所述第二导电子层（24）包含铝，其中所述第一导电子层（22）和所述第二导电子层 子层（24）基本上是平面的，并且其中第二导电子层（24）具有与第一导电子层（22）基本相同的图案。 本发明提供了一种半导体器件，其中电荷传输问题得到改善，同时确保了大的封装密度和完全的平坦拓扑结构。 这个优点在高速和/或高分辨率图像传感器中特别有用。