公开(公告)号：EP1332521B1

公开(公告)日：2013-08-28

申请号：EP01993029.6

申请日：2001-11-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BAUR, Johannes ,  EISERT, Dominik ,  FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  JACOB, Ulrich ,  OBERSCHMID, Raimund ,  PLASS, Werner ,  STRAUSS, Uwe ,  VÖLKL, Johannes ,  ZEHNDER, Ulrich

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/405

公开(公告)号：EP2513984A1

公开(公告)日：2012-10-24

申请号：EP10781917.9

申请日：2010-11-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： LELL, Alfred ,  FEHRER, Michael ,  SCHLENKER, Tilman ,  TAUTZ, Sönke ,  STRAUSS, Uwe ,  MÜLLER, Martin

IPC: H01L33/44 ,  H01L31/0216

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/186 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0025 ,  H01L2933/005 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S2301/176 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: The invention relates to an optoelectronic component comprising at least one inorganic optoelectronically active semiconductor component (10) having an active region (3) suitable for emitting or receiving light during operation, and a sealing material (6) applied to at least one surface region (7) by means of atomic layer deposition, covering the surface region (7) in a hermetically sealing manner. The invention further relates to a method for producing an opto-electronic component.

Abstract translation: 光电子器件包括具有至少一个无机光电子有源半导体部件在有源区做发射或在手术过程中接收光，和密封材料中的应用通过原子层沉积在至少一个表面区域，所述密封材料覆盖所述表面区域在气密 不可渗透的方式。

公开(公告)号：EP2425507A1

公开(公告)日：2012-03-07

申请号：EP10714321.6

申请日：2010-04-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SCHILLGALIES, Marc ,  LUTGEN, Stephan ,  STRAUSS, Uwe

IPC: H01S5/20 ,  H01S5/0683

CPC classification number: B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0683 ,  H01S5/2031 ,  H01S5/32341 ,  H01S5/34 ,  H01S2301/185 ,  H01L2924/00014

Abstract: The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (10), which comprises a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2a), a second waveguide layer (2b), and an active layer (3) arranged between the first waveguide layer (2a) and the second waveguide layer (2b) for producing laser radiation (5), and the waveguide region (4) is arranged between a first cover layer (1a) and a second cover layer (1b) following the waveguide region (4) in the growth direction of the semiconductor body (10). The waveguide region (4) has a thickness (d) of 400 nm or less, and an emission angle of the laser radiation (5) leaving the semiconductor body (10) in a direction parallel to the layer plane of the active layer (3) and the emission angle of the laser radiation (5) leaving the semiconductor body (10) in a direction perpendicular to the layer plane of the active layer (3) differ by less than a factor of 3.

公开(公告)号：EP2359605A2

公开(公告)日：2011-08-24

申请号：EP09767929.4

申请日：2009-10-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： LELL, Alfred ,  TAUTZ, Sönke ,  STRAUSS, Uwe ,  BEHRINGER, Martin Rudolf ,  BRÜNINGHOFF, Stefanie ,  DINI, Dimitri ,  EISERT, Dominik ,  EICHLER, Christoph

IPC: H04N9/31 ,  G02F1/35

CPC classification number: H04N9/3161 ,  H01S5/005 ,  H01S5/02292 ,  H01S5/4093 ,  H04N9/3129

Abstract: In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 μm.

公开(公告)号：EP1299911B1

公开(公告)日：2009-06-03

申请号：EP01953901.4

申请日：2001-07-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： EISERT, Dominik ,  HÄRLE, Volker ,  STRAUSS, Uwe ,  ZEHNDER, Ulrich

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/08 ,  H01L33/24

Abstract: The invention relates to a semiconductor chip (10), in which the active layer (3) is interrupted by cavities (11). In this way, the lateral surfaces (9) of the active layer (3) when viewed from a light generating point (6) appear at a greater solid angle and the light paths in the active layer (3) are shortened.

公开(公告)号：EP2033032A1

公开(公告)日：2009-03-11

申请号：EP07722487.1

申请日：2007-05-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HÄRLE, Volker ,  LELL, Alfred ,  OTT, Hubert ,  STATH, Norbert ,  STRAUSS, Uwe

IPC: G02B6/42 ,  G02B6/00 ,  F21V9/16 ,  G01M11/08 ,  G01M11/04

CPC classification number: G02B6/0003 ,  F21S41/13 ,  F21S41/135 ,  F21S41/14 ,  F21S41/141 ,  F21S41/16 ,  F21S41/24 ,  F21S45/46 ,  G01M11/062 ,  G01M11/088 ,  G01M11/31 ,  G01M11/33 ,  G02B6/4469 ,  G02B6/447

Abstract: An embodiment of the invention relates to a light-emitting device which comprises a radiation source (5) emitting radiation of a first wavelength, a fiber-optic waveguide (10) into which the radiation emitted by the radiation source is injected, and a converter material (15) which converts the radiation transported by the fiber-optic waveguide (10) to light (20) of a second, longer wavelength. A light-emitting device of said type may have an improved light conversion efficiency.

Abstract translation: 本发明的实施例涉及一种发光装置，其包括发射第一波长的辐射的辐射源（5），由辐射源发射的辐射被注入的光纤波导（10）以及转换器 （15），其将由所述光纤波导（10）传输的辐射转换成第二较长波长的光（20）。 所述类型的发光装置可以具有改善的光转换效率。

公开(公告)号：EP2165374B1

公开(公告)日：2016-08-17

申请号：EP08773274.9

申请日：2008-06-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  SABATHIL, Matthias ,  PETER, Matthias ,  STRAUSS, Uwe

IPC: H01L33/04 ,  H01L33/32 ,  H01S5/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/343

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

公开(公告)号：EP2569832A2

公开(公告)日：2013-03-20

申请号：EP11724985.4

申请日：2011-05-09

Applicant: Osram Opto Semiconductors Gmbh

Inventor： KÖNIG, Harald ,  STRAUSS, Uwe ,  REILL, Wolfgang

IPC: H01S5/042 ,  H01S5/0625 ,  H01S5/40

CPC classification number: H01S5/30 ,  H01L33/005 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/4031 ,  H01L2924/00

Abstract: An edge-emitting semiconductor laser (1001) is specified, having: - a semiconductor body (1) which comprises an active zone (5) suitable for producing electromagnetic radiation; - at least two facets (7) on the active zone (5), which form a resonator (55); - at least two contact points (2) which are spaced apart from one another in a lateral direction (100) by at least one intermediate region (22) and which are mounted on an outer face (11) of the semiconductor body (1).

公开(公告)号：EP2415085A1

公开(公告)日：2012-02-08

申请号：EP10707304.1

申请日：2010-03-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AVRAMESCU, Adrian, Stefan ,  QUEREN, Désirée ,  EICHLER, Christoph ,  SABATHIL, Matthias ,  LUTGEN, Stephan ,  STRAUSS, Uwe

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3407 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/173 ,  Y10S977/95 ,  Y10S977/951 ,  H01L2924/00

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), said chip is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation during operation. Furthermore, in a direction parallel to a growth direction z of the semiconductor chip (1), the at least one active quantum well (2) has N successive zones (A), where N is a natural number higher than or equal to 2. At least two of the zones (A) of the active quantum well (2) have average indium contents c that are different from each other.

Abstract translation: 在光电子半导体芯片（1）的至少一个实施例中，所述芯片基于氮化物材料系统并且包括至少一个有源量子阱（2）。 该至少一个有源量子阱（2）被设计成在操作期间产生电磁辐射。 此外，在与半导体芯片（1）的生长方向z平行的方向上，所述至少一个有源量子阱（2）具有N个连续区域（A），其中N是大于或等于2的自然数。 有源量子阱（2）的至少两个区（A）具有彼此不同的平均铟含量c。

公开(公告)号：EP1352432B1

公开(公告)日：2011-06-15

申请号：EP02702216.9

申请日：2002-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BAUR, Johannes ,  EISERT, Dominik ,  FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  JACOB, Ulrich ,  PLASS, Werner ,  STRAUSS, Uwe ,  VÖLKL, Johannes ,  ZEHNDER, Ulrich

IPC: H01L33/64 ,  H01L33/58

CPC classification number: H01L33/644 ,  F21K9/23 ,  F21V29/70 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a light-emitting diode (1) comprising a lens body (3) that is made of an inorganic solid substance. Semiconductor chips (2), which emit light beams (18), are fastened to the lens body (3). The light-emitting diode (1) is also provided with an enclosure (20) that can be screwed by means of a screw thread (21) into a traditional lamp socket.

Abstract translation: 发光二极管（1）具有由无机固体制成的透镜体（3）。 在透镜体（3）上固定有发射光束（18）的半导体芯片（2）。 此外，发光二极管（1）设置有可经由螺纹（21）拧入传统的灯座中的壳体（20）。