公开(公告)号：EP3912200A1

公开(公告)日：2021-11-24

申请号：EP20741852.6

申请日：2020-01-15

Applicant: Yale University

Inventor： MUNDHADA, Shantanu ,  FRATTINI, Nicholas ,  PURI, Shruti ,  SHANKAR, Shyam ,  GIRVIN, Steven, M. ,  DEVORET, Michel

IPC: H01L39/06 ,  H01L39/10 ,  H01L39/12 ,  H01L39/14 ,  H01L39/16 ,  H01L39/22 ,  H01L39/24

公开(公告)号：EP0346494A4

公开(公告)日：1990-10-10

申请号：EP89900892

申请日：1988-12-23

Applicant: MITSUBISHI METAL CORPORATION

Inventor： TAKESHITA, T MITSUBISHI METAL CORP CHUO KENKYUJO ,  SUGIHARA, T MITSUBISHI METAL CORP CHUO KENKYUJO

IPC: H01L39/06 ,  C01G1/00 ,  C04B41/87 ,  H01B12/06 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/498 ,  H01L23/52 ,  H01L39/14 ,  H01L39/24 ,  H01L21/88

CPC classification number: H01L39/2464 ,  H01L21/76891 ,  H01L23/49888 ,  H01L39/143 ,  H01L39/2461 ,  H01L2924/0002 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/704 ,  Y10S505/73 ,  Y10T29/49014 ,  Y10T428/12618 ,  H01L2924/00

公开(公告)号：EP3577700B1

公开(公告)日：2022-03-30

申请号：EP18747998.5

申请日：2018-01-31

Inventor： HUANG, Shuiyuan ,  OH, Byong, H. ,  STADTLER, Douglas, P. ,  STERPKA, Edward, G. ,  BUNYK, Paul, I. ,  WHITTAKER, Jed, D. ,  ALTOMARE, Fabio ,  HARRIS, Richard, G. ,  ENDERUD, Colin, C. ,  SWENSON, Loren, J. ,  LADIZINSKY, Nicolas, C. ,  YAO, Jason, J. ,  LADIZINSKY, Eric, G.

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/06 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

公开(公告)号：EP3891765A1

公开(公告)日：2021-10-13

申请号：EP19893123.0

申请日：2019-12-04

Applicant: Advanced Conductor Technologies LLC

Inventor： VAN DER LAAN, Daniël Cornelis

IPC: H01B12/06 ,  H01B9/04 ,  H01B13/00 ,  H01F6/06 ,  H01L39/06 ,  H01R4/68

公开(公告)号：EP3427310B1

公开(公告)日：2021-09-15

申请号：EP16893754.8

申请日：2016-03-10

Inventor： BRUNO, Alessandro ,  POLETTO, Stefano ,  DICARLO, Leonardo

IPC: H01L39/02 ,  H01L39/08 ,  H01L39/06 ,  H01L39/12 ,  H01L39/24

公开(公告)号：EP3164897A1

公开(公告)日：2017-05-10

申请号：EP15735666.8

申请日：2015-07-02

Applicant: University of Copenhagen

Inventor： KROGSTRUP, Peter ,  JESPERSEN, Thomas Sand ,  MARCUS, Charles M. ,  NYGÅRD, Jesper

IPC: H01L39/22 ,  H01L39/24 ,  H01L39/06 ,  H01L29/06 ,  H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45

CPC classification number: H01L39/02 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/28 ,  C30B11/12 ,  C30B23/025 ,  C30B23/066 ,  C30B29/62 ,  H01L29/0673 ,  H01L29/413 ,  H01L29/437 ,  H01L29/66469 ,  H01L39/025 ,  H01L39/125 ,  H01L39/221 ,  H01L39/223 ,  H01L39/228 ,  H01L39/2432 ,  H01L39/2493 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/891 ,  Y10S977/938 ,  Y10S977/943

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract translation: 本公开涉及纳米级装置及其制造方法，所述纳米级装置包括细长晶体纳米结构，例如纳米线晶体，纳米晶须晶体或纳米棒晶体。 一个实施方案涉及纳米尺度装置，其包含细长晶体半导体纳米结构，例如优选由砷化铟制成的纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），其具有多个基本平面的侧面，晶体结构 覆盖一个或多个所述侧面的至少一部分的超导材料（优选铝）的第一小面层，以及覆盖第一小面层的至少一部分的超导材料（优选钒）的第二小面层，所述第一小面层 所述第二小面层的超导材料不同于所述第一小面层的超导材料，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一小面层的晶体结构外延匹配。

公开(公告)号：EP3577700A1

公开(公告)日：2019-12-11

申请号：EP18747998.5

申请日：2018-01-31

Applicant: D-Wave Systems Inc.

Inventor： HUANG, Shuiyuan ,  OH, Byong, H. ,  STADTLER, Douglas, P. ,  STERPKA, Edward, G. ,  BUNYK, Paul, I. ,  WHITTAKER, Jed, D. ,  ALTOMARE, Fabio ,  HARRIS, Richard, G. ,  ENDERUD, Colin, C. ,  SWENSON, Loren, J. ,  LADIZINSKY, Nicolas, C. ,  YAO, Jason, J. ,  LADIZINSKY, Eric, G.

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/06

公开(公告)号：EP3164889A1

公开(公告)日：2017-05-10

申请号：EP15707943.5

申请日：2015-03-04

Applicant: University of Copenhagen

Inventor： MARCUS, Charles ,  KROGSTRUP, Peter ,  JESPERSEN, Thomas Sand ,  NYGÅRD, Jesper ,  PETERSSON, Karl ,  LARSEN, Thorvald ,  KUEMMETH, Ferdinand

IPC: H01L29/41 ,  H01L29/66 ,  H01L29/06 ,  H01L29/43 ,  H01L29/45 ,  H01L39/22 ,  H01L39/24 ,  H01L39/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L39/02 ,  H01L39/08

CPC classification number: H01L39/02 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/28 ,  C30B11/12 ,  C30B23/025 ,  C30B23/066 ,  C30B29/62 ,  H01L29/0673 ,  H01L29/413 ,  H01L29/437 ,  H01L29/66469 ,  H01L39/025 ,  H01L39/125 ,  H01L39/221 ,  H01L39/223 ,  H01L39/228 ,  H01L39/2432 ,  H01L39/2493 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/891 ,  Y10S977/938 ,  Y10S977/943

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract translation: 本公开涉及纳米级装置及其制造方法，所述纳米级装置包括细长晶体纳米结构，例如纳米线晶体，纳米晶须晶体或纳米棒晶体。 一个实施方案涉及纳米尺度装置，其包含细长晶体半导体纳米结构，例如优选由砷化铟制成的纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），其具有多个基本平面的侧面，晶体结构 覆盖一个或多个所述侧面的至少一部分的超导材料（优选铝）的第一小面层，以及覆盖第一小面层的至少一部分的超导材料（优选钒）的第二小面层，所述第一小面层 所述第二小面层的超导材料不同于所述第一小面层的超导材料，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一小面层的晶体结构外延匹配。

公开(公告)号：EP0726621A3

公开(公告)日：1998-05-06

申请号：EP96300697

申请日：1996-01-31

Applicant: AT & T CORP

Inventor： FASTNACHT RICHARD A ,  ZHU WEI ,  JIN SUNGHO

IPC: H01L39/24 ,  H01B5/16 ,  H01B12/02 ,  H01B13/00 ,  H01L21/48 ,  H01L23/498 ,  H01L39/06 ,  H01R12/71 ,  H01R13/24 ,  H01R43/00 ,  H05K3/10 ,  H05K3/34 ,  H05K3/40 ,  H01R23/72

CPC classification number: H01R13/2407 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01R12/714 ,  H01R43/007 ,  H05K3/105 ,  H05K3/3436 ,  H05K3/4038 ,  H05K3/4069 ,  H05K2201/09945 ,  H05K2201/10378 ,  Y02P70/613 ,  Y10S505/739 ,  H01L2924/00

Abstract: In accordance with the invention, a high density z-direction interconnection medium is made by the steps of providing a non-conductive membrane having z-direction channels, filling the channels with liquid precursor of conductive material, converting the trapped precursor into conductive material within the channels, and, advantageously, forming solder bumps in contact with the conductive material in the channels. The method is particularly useful for forming hollow tubular or porous conductive pathways having enhanced resistance to thermal and mechanical stress. The channels can be conveniently filled by vacuum suction,

公开(公告)号：EP0347470A4

公开(公告)日：1990-10-10

申请号：EP89900893

申请日：1988-12-23

Applicant: MITSUBISHI METAL CORPORATION

Inventor： SUGIHARA, T MITSUBISHI METAL CORP CHUO KENKYUJO ,  MURAKAMI, Y MITSUBISHI METAL CORP CHUOKENKYUJO ,  TAKESHITA, T MITSUBISHI METAL CORP CHUOKENKYUJO

IPC: C01G1/00 ,  C04B41/87 ,  H01B12/06 ,  H01B13/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/498 ,  H01L23/52 ,  H01L39/24 ,  H01L21/88 ,  H01L39/06

CPC classification number: H01L39/2464 ,  H01L21/76891 ,  H01L23/49888 ,  H01L2924/0002 ,  H01L2924/00