公开(公告)号：EP4512925A1

公开(公告)日：2025-02-26

申请号：EP24760307.9

申请日：2024-02-19

Applicant: DAIKIN INDUSTRIES, LTD. ,  The University of Tokyo

Inventor： YAMAUCHI, Akiyoshi ,  MATSUNAGA, Takayuki ,  KISHIKAWA, Yosuke ,  HORIGUCHI, Kazunori ,  NAKAMURA, Shingo ,  SAGISAKA, Shigehito ,  SHIMOGAKI, Yukihiro ,  MOMOSE, Takeshi ,  DEURA, Momoko ,  SATO, Noboru ,  YAMAGUCHI, Jun

IPC: C23C16/448 ,  C23C16/455

Abstract: The present disclosure provides a method for producing a thin film by atomic layer deposition, the method comprising:
vaporizing a raw material liquid comprising a raw material compound in a vaporizer;
introducing the raw material compound vaporized into a film deposition chamber; and
forming a thin film on a substrate, wherein
the method comprises discharging a gas phase in the vaporizer.

公开(公告)号：EP4508144A1

公开(公告)日：2025-02-19

申请号：EP23788804.5

申请日：2023-04-10

Applicant: Oerlikon Metco (US) Inc.

Inventor： CHEN, Dianying

IPC: C09C3/06 ,  C23C16/44

公开(公告)号：EP4506485A1

公开(公告)日：2025-02-12

申请号：EP23784884.1

申请日：2023-03-17

Applicant: Soulbrain Co., Ltd.

Inventor： LEE, Seung Hyun ,  JUNG, Jae Sun ,  YEON, Chang Bong ,  KIM, Deok Hyun

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  H01L21/02 ,  H01L21/285

Abstract: The present invention relates to a method of forming a thin film, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by effectively replacing the ligand of an adsorption precursor by using a reaction surface pretreatment agent and a ligand substitution agent in combination, the reaction speed may be improved and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, impurities may be reduced, and film quality may be improved.

公开(公告)号：EP4504424A1

公开(公告)日：2025-02-12

申请号：EP23719314.9

申请日：2023-04-06

Applicant: Molecular Plasma Group SA

Inventor： HEYBERGER, Régis ,  SCHONS, Bertrand ,  BOREK-DONTEN, Joanna

IPC: B05B7/00 ,  B05B7/24 ,  C23C16/448 ,  C23C16/455 ,  C23C16/513 ,  B05B14/00 ,  B05D1/02 ,  B05D1/34 ,  B05D1/00

公开(公告)号：EP3593391B1

公开(公告)日：2025-02-12

申请号：EP18714129.6

申请日：2018-02-21

Inventor： KLEINE JAEGER, Frank ,  LIEBSCH, Tillmann ,  SCHOENHERR, Michael ,  GARELLA, Dominik ,  CETINEL, Fatih ,  SOMMER, Heino ,  AHLF, Maraike ,  LOEFFLER, Daniel ,  VOGELSANG, Regina ,  HAAG, Jacob

IPC: H01M4/36 ,  C23C16/44 ,  H01M4/505 ,  H01M4/525

公开(公告)号：EP4497155A1

公开(公告)日：2025-01-29

申请号：EP23775434.6

申请日：2023-02-21

Applicant: Applied Materials Inc;

Inventor： PARKHE, Vijay, D.

IPC: H01L21/683 ,  H01L21/687 ,  C23C16/458

公开(公告)号：EP3700993B1

公开(公告)日：2025-01-29

申请号：EP18782363.8

申请日：2018-09-27

Inventor： KOOPS, Arne ,  BENDEICH, Manuel

IPC: C09J7/30 ,  C23C16/40 ,  C23C16/513 ,  C23C16/455 ,  C23C16/54

公开(公告)号：EP4493735A1

公开(公告)日：2025-01-22

申请号：EP23710773.5

申请日：2023-03-15

Applicant: JT International SA

Inventor： ZIGMUND, Branislav ,  SLIVA, Stanislav ,  VANKO, Daniel

IPC: C23C16/46 ,  C30B25/12 ,  A24D1/20

公开(公告)号：EP3389730B1

公开(公告)日：2025-01-22

申请号：EP16802023.8

申请日：2016-11-24

Inventor： VORWERK, Jürgen, Franz ,  SINGUR, Igor ,  KYTZIA, Sebastian

IPC: A61L2/14 ,  A61L2/20 ,  C23C16/04 ,  B65D23/02

公开(公告)号：EP4492431A1

公开(公告)日：2025-01-15

申请号：EP24186272.1

申请日：2024-07-03

Applicant: Kokusai Electric Corporation

Inventor： KOIDE, Hiroyuki ,  SUYAMA, Nagisa ,  NAGAHASHI, Tomoya

IPC: H01L21/02 ,  C23C16/00

Abstract: There is provided a technique that includes: (a) supplying a decomposable process gas containing silicon to the substrate to form a layer containing a Si-Si-Si bond on the substrate; and (b) supplying a reaction gas to the substrate to dissociate the Si-Si-Si bond.