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    Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen.
    7.
    发明公开
    Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen. 审中-公开
    一种制备β-内Ga2O3单晶，其包含在金属坩埚中，由Schmelzs的凝固和氧气压力的过程。

    公开(公告)号：EP3042986A1

    公开(公告)日：2016-07-13

    申请号：EP15150582.3

    申请日：2015-01-09

    申请人： Forschungsverbund Berlin e.V.

    发明人： Galazka, Zbigniew, Dr. ,  Uecker, Reinhard, Dr. ,  Klimm, Detlef, Dr. ,  Bickermann, Matthias, Prof.Dr.

    IPC分类号： C30B29/16 ,  C30B15/20 ,  C30B17/00 ,  C30B11/00

    CPC分类号： C30B29/16 ,  C30B11/005 ,  C30B11/006 ,  C30B15/08 ,  C30B15/20 ,  C30B15/34 ,  C30B17/00

    摘要： A method for growing beta phase of gallium oxide (β-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).

    摘要翻译： 一种用于氧化镓的生长β相（²-的Ga 2 O 3）从含有金属坩埚由一热绝缘包围和加热用加热器内的熔体单晶的方法。 提供到生长炉A生长气氛具有在寻求一种方法所做的氧浓度达到在5-100的浓度范围内（SC）生长氧浓度值（C2，C2”，C2“）的可变的氧浓度或分压 下面的Ga 2 O 3的熔融温度（MT）或在熔化温度（MT）或Ga的2 O 3原料angepasst完全熔化后％（体积），以尽量减少金属镓量的创建，并与金属THUS共晶形成 坩埚中。在晶体生长步骤²-的Ga 2 O 3从在生长温度（GT）的生长氧浓度值（C2，C2”，C2“）熔体单晶被保持在氧浓度范围内（SC ）。

    Method for growing silicon carbide crystal
    8.
    发明公开
    Method for growing silicon carbide crystal 审中-公开
    Verfahren zurZüchtungvon Silicium carbidkristall

    公开(公告)号：EP2881498A1

    公开(公告)日：2015-06-10

    申请号：EP14195245.7

    申请日：2014-11-27

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Shinya, Naofumi ,  Hamaguchi, Yu ,  Yamagata, Norio ,  Minowa, Takehisa

    IPC分类号： C30B29/36 ,  C30B17/00

    摘要： In the present invention, a crucible formed of SiC as a main component is used as a container for a Si-C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the SiC solution, into the Si-C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si-C solution. To the Si-C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si-C solution and brought into contact with the Si-C solution to grow a SiC single crystal on the SiC seed crystal.

    摘要翻译： 在本发明中，以SiC为主成分的坩埚用作Si-C溶液的容器。 加热SiC坩埚，使得例如表示坩埚内的温度分布的等温线呈现倒置的凸形状; 来自坩埚的主要成分SiC的Si和C从与SiC溶液接触的坩埚的高温表面区域洗脱到Si-C溶液中，从而抑制SiC多晶体的沉淀 在与Si-C溶液接触的坩埚的表面上。 对于该状态的Si-C溶液，SiC晶种从坩埚的上部向下移动到靠近Si-C溶液并与Si-C溶液接触以在SiC上生长SiC单晶 晶种。