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公开(公告)号：EP4174220B1
公开(公告)日：2024-09-25
申请号：EP22203535.4
申请日：2022-10-25
CPC分类号： C30B11/003 , C30B11/002 , C30B11/02 , C30B11/007 , C30B29/16 , C30B35/00 , C30B35/002
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公开(公告)号：EP4056730B1
公开(公告)日：2024-07-17
申请号：EP21161744.4
申请日：2021-03-10
CPC分类号： C23C16/4481 , B01B1/005 , B01D1/0011 , F17C11/00 , C30B35/007 , C30B25/14
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4.发明公开
公开(公告)号：EP4382643A1
公开(公告)日：2024-06-12
申请号：EP23211121.1
申请日：2023-11-21
发明人： Blazek, Karel , Nikl, Martin , Tous, Jan , Bartos, Karel , Polak, Jan , Marek, Tomas
CPC分类号： C30B29/24 , C30B15/00 , C30B35/007 , C30B27/02 , C30B33/02
摘要： The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1-x-yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.
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6.发明公开
公开(公告)号：EP4276227A3
公开(公告)日：2023-12-27
申请号：EP23196910.6
申请日：2022-09-07
摘要： A SiC single crystal is produced by impregnating a molten alloy of silicon and a metallic element M that increases carbon solubility into a SiC sintered body to form a SiC crucible, placing silicon and M in the crucible and heating the crucible to melt the silicon and M and form a Si-C solution, dissolving silicon and carbon in the solution from surfaces of the crucible in contact with the solution, contacting a SiC seed crystal with the top of the solution to grow a first SiC single crystal on the SiC seed crystal by a solution process, and bulk growing a second SiC single crystal on a face of the solution-grown first SiC single crystal by a sublimation or gas process. This method enables a low-dislocation, high-quality SiC single crystal to be produced by a vapor phase process.
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公开(公告)号：EP4284969A1
公开(公告)日：2023-12-06
申请号：EP22706664.4
申请日：2022-01-28
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公开(公告)号：EP4174220A1
公开(公告)日：2023-05-03
申请号：EP22203535.4
申请日：2022-10-25
发明人： IGARASHI, Takuya , UEDA, Yuki , KOSHI, Kimiyoshi
摘要： A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accommodated therein, a tubular susceptor surrounding the seed crystal section and also supporting the crucible from below, and a molybdenum disilicide heating element to melt a raw material in the growing crystal section to obtain the raw material melt. The susceptor includes a thick portion at a portion in a height direction that is thicker and has a shorter horizontal distance from the seed crystal section than other portions. The thick portion surrounds at least a portion of the seed crystal section in the height direction.
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公开(公告)号：EP3921462B1
公开(公告)日：2023-04-12
申请号：EP20702507.3
申请日：2020-02-06
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公开(公告)号：EP3330240B1
公开(公告)日：2022-07-06
申请号：EP17204501.5
申请日：2017-11-29
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