公开(公告)号：EP2922084B1

公开(公告)日：2018-01-10

申请号：EP13855882.0

申请日：2013-11-15

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/265 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/302 ,  C23C10/22 ,  F27B17/00 ,  C23C10/02 ,  C30B35/00 ,  H01L21/04 ,  H01L29/16 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/673 ,  C23C10/02 ,  C23C10/22 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  F27B17/0025 ,  H01L21/046 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6719 ,  H01L29/1608

摘要： The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

公开(公告)号：EP2463246A4

公开(公告)日：2017-06-21

申请号：EP10806179

申请日：2010-06-25

申请人： SHIN-ETSU QUARTZ PRODUCTS CO LTD ,  HERAEUS QUARZGLAS

发明人： YAMAGATA SHIGERU ,  USUI TOMOMI

IPC分类号： C03B19/09 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00

CPC分类号： C03B19/095 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/2982

摘要： The present invention is a method for producing a silica container arranged with a silica substrate having a rotational symmetry, wherein the method comprises: a step of forming a preliminarily molded article having a prescribed shape by feeding a powdered substrate's raw material (silica particles) to an inner wall of an outer frame having sucking holes with rotating the frame, and a step of forming a silica substrate wherein the preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O 2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body. With this, provided are a method for producing a silica container, having a high dimensional precision and containing extremely low amount of carbon and an OH group, with a low production cost by using main raw material powders comprised of a silica as its main component, and a silica container thereby obtained.

摘要翻译： 本发明是一种二氧化硅容器的制造方法，该二氧化硅容器配置有具有旋转对称性的二氧化硅基体，其中，该方法包括：通过将粉末状的基材原料（二氧化硅粒子）供给至具有预定形状的预成形体而形成 具有使框架旋转的吸孔的外框的内壁和通过使存在于外框内的气体通气而控制外框内的湿度，由此形成二氧化硅基材的工序，其中，从外周侧吸引预备成型品 从该暂时成形品内部填充由O 2气体和惰性气体构成的混合气体，通过除湿使其在规定的露点温度以下进行加热，同时从该暂时成形品的内部通过放电加热， 利用碳电极进行热熔融法，从而形成预备成形品t的外周部 ○烧结体，而内周部分为熔融玻璃体。 由此，提供一种二氧化硅容器的制造方法，该二氧化硅容器的尺寸精度高，并且含有极少量的碳和OH基，并且通过使用以二氧化硅为主要成分的主要原料粉末，生产成本低， 并由此获得二氧化硅容器。

公开(公告)号：EP3018237A4

公开(公告)日：2017-02-22

申请号：EP13888584

申请日：2013-06-30

申请人： SUMCO CORP

发明人： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA KEN ,  OHARA MASAMI

IPC分类号： C30B29/06 ,  C03B20/00 ,  C30B15/10 ,  G01N21/3563 ,  G01N21/65 ,  G01N21/84 ,  G01N21/95

CPC分类号： H01J37/32935 ,  C30B15/00 ,  C30B15/10 ,  C30B15/14 ,  C30B29/06 ,  C30B35/002 ,  G01N21/3563 ,  G01N21/65 ,  G01N21/68 ,  G01N21/95 ,  G01N2021/8477 ,  G01N2201/105 ,  G01N2201/12

摘要： An inspection method of vitreous silica crucibles, includes: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether or not a surface-defect region occurs at the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.

摘要翻译： 玻璃状石英坩埚的检查方法包括：测量石英坩埚内表面上的测量点的红外吸收光谱或拉曼偏移的测量步骤; 基于获得的光谱来预测在测量点是否出现表面缺陷区域以确定石英玻璃坩埚的质量的确定步骤。

公开(公告)号：EP3126549A1

公开(公告)日：2017-02-08

申请号：EP15717572.0

申请日：2015-03-30

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： CHAVRIER, Denis ,  GARANDET, Jean-Paul ,  PIHAN, Etienne

IPC分类号： C30B33/06

CPC分类号： C30B11/002 ,  B05D3/007 ,  B05D7/22 ,  B28D5/04 ,  C30B11/02 ,  C30B29/06 ,  C30B33/00 ,  C30B33/06 ,  C30B35/002 ,  H01L31/1804 ,  H01L31/1864

摘要： The invention relates to a crucible (1) for the formation of a crystalline material by solidification by growth on seed, comprising a base (2), at least one side wall (3) orthogonal to the base (2) of the crucible (1), and means for representing the position of at least one seed intended to be positioned at the base of the crucible, said seed comprising at least first and second faces orthogonal to the base of the crucible. The representation means comprise at least two markers (4) that extend over the inner face of the at least one side wall (3) along an axis orthogonal to the base of the crucible (1). The respective positions of at least two of the markers on at least one of the side walls (3) define, in the crystalline material, a first cutting plane tangent to the first face of said seed and a second cutting plane tangent to the second face of said seed.

摘要翻译： 一种用于形成结晶材料的固化通过由种子生长，包括底部，至少一个侧壁垂直于所述坩埚的底部坩埚中，并至少2马克扩展至少一个侧壁的内表面上 在正交方向与坩埚的底部，用于材料伊辛至少一个种子设计为在坩埚的底部被定位的位置，所述种子包括在垂直于所述坩埚的底部至少第一和第二表面。 至少两个侧壁上限定的至少一个的标记的的位置respectivement，在结晶材料，第一切割平面切线到种子的所述第一表面和第二切割平面切线到种子的第二表面 ，

公开(公告)号：EP3018237A1

公开(公告)日：2016-05-11

申请号：EP13888584.3

申请日：2013-06-30

申请人： SUMCO Corporation

发明人： SUDO Toshiaki ,  SATO Tadahiro ,  KITAHARA Ken ,  OHARA Masami

IPC分类号： C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC分类号： H01J37/32935 ,  C30B15/00 ,  C30B15/10 ,  C30B15/14 ,  C30B29/06 ,  C30B35/002 ,  G01N21/3563 ,  G01N21/65 ,  G01N21/68 ,  G01N21/95 ,  G01N2021/8477 ,  G01N2201/105 ,  G01N2201/12

摘要： An inspection method of vitreous silica crucibles, includes: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether or not a surface-defect region occurs at the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.

公开(公告)号：EP3006606A1

公开(公告)日：2016-04-13

申请号：EP13886011.9

申请日：2013-05-31

申请人： Sumco Corporation

发明人： SUDO, Toshiaki ,  KITAHARA, Ken ,  AIBA, Akihiro ,  OUSYUYA, Kazushi ,  YOSHIDA, Fumie ,  HINOOKA, Makiko ,  KITAHARA, Eriko ,  SATO, Tadahiro

IPC分类号： C30B15/10

CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57

摘要： The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress.

摘要翻译： 本发明提供了即使长时间在高温条件下使用也抑制变形的石英玻璃坩埚及其制造方法。 玻璃状石英玻璃坩埚包括：基本上圆柱形的直体部分，其在顶端具有开口并在垂直方向上延伸，弯曲的底部部分和将直体部分与底部连接的拐角部分，其曲率是 大于底部的玻璃状坩埚，其中，石英玻璃坩埚在内侧包括透明层，外侧具有气泡层，在透明层的内表面侧保留压缩应力的压缩应力层，以及 拉伸应力层，其中拉应力保持并且以逐渐的应力变化率邻近压应力层。

公开(公告)号：EP2831220A4

公开(公告)日：2016-01-27

申请号：EP13769204

申请日：2013-03-28

申请人： MITEGEN LLC

发明人： THORNE ROBERT E ,  APKER BENJAMIN ,  NEWMAN ROBERT

IPC分类号： C12M1/18

CPC分类号： B01L3/5085 ,  B01L2200/0678 ,  B01L2300/0829 ,  B01L2300/0858 ,  B01L2300/0893 ,  C12M23/12 ,  C30B35/002

摘要： Devices and methods for manual and high-throughput protein crystal growth and growth of other biological and organic crystals. A microplate includes a plurality of cells and a frame that defines the cells in the microplate. In each cell there is at least one well open at top. Each well in a cell may be enclosed at bottom, or it may be open at bottom, in which case the well bottom may be sealed by a separate part, which may be, e.g., a separate film or plate (e.g., of plastic, glass or metal) or a molded part.

公开(公告)号：EP2798101B1

公开(公告)日：2015-12-09

申请号：EP12723425.0

申请日：2012-05-15

申请人： Siltronic AG

发明人： KATO, Hideo ,  KYUFU, Shinichi ,  OHKUBO, Masamichi

IPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  C03B19/09

CPC分类号： C30B15/005 ,  C30B15/02 ,  C30B15/10 ,  C30B29/06 ,  C30B30/04 ,  C30B35/002

公开(公告)号：EP2799597A1

公开(公告)日：2014-11-05

申请号：EP12861985.5

申请日：2012-10-31

申请人： SUMCO CORPORATION

发明人： SUDO, Toshiaki ,  SATO, Tadahiro ,  KITAHARA, Ken ,  YOSHIOKA, Takuma ,  KISHI, Hiroshi

IPC分类号： C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B11/002 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1032

摘要： Buckling of a vitreous silica crucible 12 or inward fall of a sidewall 15 is effectively suppressed. The vitreous silica crucible 12 includes the cylindrical sidewall 15 having an upward-opening rim, a mortar-shaped bottom 16 including a curve, and a round portion 17 connescting the sidewall 15 and the bottom 16. In the vitreous silica crucible 12, the per-unit area thermal resistance in the thickness direction of the sidewall 15 is higher than that of the round portion 17.

摘要翻译： 玻璃状石英坩埚12的弯曲或侧壁15的向内下降被有效地抑制。 玻璃状石英玻璃坩埚12包括具有向上开口的边缘的圆柱形侧壁15，包括曲线的砂浆形底部16和与侧壁15和底部16连接的圆形部分17.在石英玻璃坩埚12中， 侧壁15的厚度方向的单位面积热阻高于圆形部17的热阻。

公开(公告)号：EP2798102A1

公开(公告)日：2014-11-05

申请号：EP12733161.9

申请日：2012-07-10

申请人： Siltronic AG

发明人： KATO, Hideo ,  KYUFU, Shinichi

IPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  C30B15/22

CPC分类号： C30B15/02 ,  C30B15/10 ,  C30B15/22 ,  C30B29/06 ,  C30B35/002

摘要： There is provided a method for manufacturing single-crystal silicon that makes it possible to reduce occurrence of dislocation of the single-crystal silicon when the single-crystal silicon is grown using a multi-pulling method for pulling up a plurality of pieces of single-crystal silicon from a material melt in an dentical crucible. Solving Means A method for manufacturing single-crystal silicon is directed to a method for manufacturing a single-crystal silicon (1) using the multi-pulling method for pulling up a plurality of pieces of single-crystal silicon (1) from a material melt (7) in an identical crucible (8) within a chamber by a Czochralski method, the method including the step of omitting at least a part of formation of a tail part of the single-crystal silicon (1) and separating the single-crystal silicon from the material melt, wherein an amount of addition of barium formed on an inner wall of crucible (8) is controlled within a certain range.

摘要翻译： 通过使用具有与坩埚的直径成反比变化的内表面上的一定量的钡的熔融坩埚来提高通过切克劳斯基法的多拉单晶生长的成功率。 通过自由跨度法将至少一个单晶与熔体分离。