摘要:
A semiconductor chip gyroscopic transducer (10) is disclosed in which a semiconductor element (47) is supported in an outer element by a flexible linkage system which is in turn supported in a frame of semiconductor material (16) by another flexible linkage system which permits the element to vibrate about two axes relative to the frame. Balanced torque forces are provided by a system of buried (50, 52, 54, 56) and bridge (58, 60, 62, 64) electrodes. The stress and tension resulting from doping of these elements are released by a flexure beam (20, 22, 36, 38). The inertial mass of the inner element is balanced by formation in a central pit and on-chip electronics avoids the capacitive loading effects of long runs from high impedance sources. Flexure footings are integrated with the structure adding stability to flexures connecting the supported gyroscopic resonator element to the supporting structure, offsetting a rippling effect inherent in the oxide structure. Flexure grooves provide selective stiffness in the flexure. The bridge electrodes (58, 60, 62, 64) are additionally electrically isolated for electrical compatibility with gyroscope electronics.
摘要:
A multiple-axis gas flow type angular velocity sensor (1) which can accurately and stably detect the magnitude and direction of angular velocities acting in two or more directions is comprised of a plurality of semiconductor substrates (2-5) on which are formed thermosensitive resistor elements (H W-R , H W-L ; H W-U , H W-D ) and gas passage portions (7,9,11,13) by performing precision processing using a photo-engraving process from the semiconductor production field. The semiconductor substrates (2-5) are laminated together to provide a sensor having a plurality of pairs of resistor elements (H W-R , H W-L ; H W-U , H W-D ) in a gas passage (7,9,11,13).
摘要:
A multiple-axis gas flow type angular velocity sensor (1) which can accurately and stably detect the magnitude and direction of angular velocities acting in two or more directions is comprised of a plurality of semiconductor substrates (2-5) on which are formed thermosensitive resistor elements (H W-R , H W-L ; H W-U , H W-D ) and gas passage portions (7,9,11,13) by performing precision processing using a photo-engraving process from the semiconductor production field. The semiconductor substrates (2-5) are laminated together to provide a sensor having a plurality of pairs of resistor elements (H W-R , H W-L ; H W-U , H W-D ) in a gas passage (7,9,11,13).
摘要:
A gas flow type angular velocity sensor which is capable of reliably sensing an angular velocity while accurately controlling the working gas flow with temperature compensation by using a pair of heat wires as a gas flow sensor without providing any additional gas flow sensor in the sensor body wherein a an angular velocity sensing bridge circuit is provided at its current supply source with a connected in series therewith temperature compensating circuit which is composed of a pair of series or parallel resistance elements: one is a thermosensitive resistance element disposed in a gas path and the other is a reference resistance element disposed outside the gas path.
摘要:
A gas flow type sensor with a heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the same time, effectively reducing an interfacial stress produced therein. The process comprises a film forming process for sequentially depositing by sputtering SiN, Pt and SiN in three layers on a semiconductor substrate and a heat treatment process for heat treatment of the coated films at a temperature up to 600°C.
摘要:
The specification discloses an angular velocity sensor of the type wherein a flow of gas forced by a pump into a gas path in the sensor body (9) through a nozzle hole and directed toward a pair of thermosensitive resistance elements provided in the gas path is deflected by the action of an angular velocity and the deflection of the gas flow is sensed by means of the thermosensitive resistance elements, and which is further provided with a thermostatically-controlled gas path (10) with heating means (11) for keeping the gas flow at a constant temperature with no affection of ambient temperature variations and also provided with a gas path for absorbing pulsations of the gas flow caused by pumping operations.