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    FIELD EFFECT TRANSISTOR WITH ELEVATED ACTIVE REGIONS AND METHODS OF MANUFACTURING THE SAME
    2.
    发明公开
    FIELD EFFECT TRANSISTOR WITH ELEVATED ACTIVE REGIONS AND METHODS OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：EP3916801A1

    公开(公告)日：2021-12-01

    申请号：EP21182810.8

    申请日：2016-04-20

    申请人： SanDisk Technologies LLC

    发明人： NISHIKAWA, Masatoshi ,  INOUE, Akira ,  TOYAMA, Fumiaki

    IPC分类号： H01L29/417 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L27/11529 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/11556

    摘要： A field effect transistor having a higher breakdown voltage can be provided by forming a contiguous dielectric material layer (60) over gate stacks (50; 52; 58), forming via cavities (169) laterally spaced from the gate stacks (50; 52; 58), selectively depositing a single crystalline semiconductor material, and converting upper portions of the deposited single crystalline semiconductor material into elevated source/drain regions (136S; 136D). Lower portions of the selectively deposited single crystalline semiconductor material in the via cavities (169) can have a doping of a lesser concentration, thereby effectively increasing the distance between two steep junctions at edges of a source region (136S) and a drain region (136D). Optionally, embedded active regions (232S; 232D) for additional devices can be formed prior to formation of the contiguous dielectric material layer (60). Raised active regions (236S; 236D) contacting a top surface of a substrate (10) can be formed simultaneously with formation of the elevated active regions (136S; 136D) that are vertically spaced from the top surface.