ULTRA-THIN PLASMONIC SOLAR CELLS, METHODS FOR THEIR MANUFACTURE AND USE

    公开(公告)号:EP4199119A1

    公开(公告)日:2023-06-21

    申请号:EP22179899.4

    申请日:2018-03-28

    摘要: An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver; and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker / linkers. A method for producing said plasmonic solar cell by self-assembly.

    A/M/X CRYSTALLINE MATERIAL, PHOTOVOLTAIC DEVICE, AND PREPARATION METHOD THEREFOR

    公开(公告)号:EP4236651A1

    公开(公告)日:2023-08-30

    申请号:EP21963474.8

    申请日:2021-12-23

    IPC分类号: H10K10/00

    摘要: This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is ≥80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R avg being ≤75.

    SEMICONDUCTOR ELEMENT
    7.
    发明公开

    公开(公告)号:EP4443520A1

    公开(公告)日:2024-10-09

    申请号:EP22898176.7

    申请日:2022-08-10

    申请人: Kao Corporation

    发明人: ASAI Mitsuo

    摘要: The present disclosure relates to a semiconductor element 1 including: a gate electrode 2; a source electrode 3; a drain electrode 4; a semiconductor layer 5 that is in contact with the source electrode 3 and the drain electrode 4; and a gate insulating layer 6 that insulates the semiconductor layer 5 from the gate electrode 2, in which the semiconductor layer 5 has a network structure of carbon nanotubes, the semiconductor layer 5 is sealed with a sealing layer 8, and the semiconductor layer 5 has an average thickness of 5 nm or less. The sealing layer 8 preferably contains a compound whose SP value calculated using the Fedors method is 15 (cal/cm3)1/2 or less. Also, the sealing layer preferably has a relative permittivity of 5.0 or less. The sealing layer 8 preferably contains one or more selected from the group consisting of a fluorine-based resin, an acrylic resin, a styrene-based resin, a vinyl-based resin, and an olefin-based resin.

    PEROVSKITE CELL AND PHOTOVOLTAIC MODULE
    10.
    发明公开

    公开(公告)号:EP4369885A1

    公开(公告)日:2024-05-15

    申请号:EP22851652.2

    申请日:2022-05-10

    IPC分类号: H10K10/00

    摘要: The present application relates to the technical field of solar photovoltaics. Provided are a perovskite cell and a photovoltaic module. The perovskite cell comprises a perovskite light absorption layer, a first carrier transport layer, a second carrier transport layer, a first transparent electrode layer, a second transparent electrode layer, and an optical adjustment layer, wherein the optical adjustment layer is arranged between the second carrier transport layer and the second transparent electrode layer; and the transmittance of the optical adjustment layer for visible light is greater than or equal to a preset transmittance, and the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity. In the present application, the transmittance of an optical adjustment layer for visible light is greater than or equal to a preset transmittance, such that the efficiency of the perovskite cell and the lighting requirement of a building can be ensured; in addition, when the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity, the requirements of the building for heat preservation, refrigeration, etc., can be ensured, thereby reducing the energy loss caused by the requirements of the building for heat preservation and refrigeration.